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ZnGa2O4 Thin-Film Phosphors Grown by Pulsed Laser Ablation

Published online by Cambridge University Press:  10 February 2011

Yong Eui Lee ,
Christopher M. Rouleau ,
Chan Park  and
David P. Norton
Christopher M. Rouleau
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
Chan Park
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
David P. Norton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
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Abstract

The growth and properties of undoped and Mn-doped ZnGa2O4 thin-film phosphors on (100) MgO and glass substrates using pulsed laser ablation were investigated. Blue-white and green emission were observed for as-deposited undoped and Mn-doped films, respectively. Luminescent properties as well as crystallinity were considerably affected by processing conditions and film stoichiometry. Films with enhanced luminescent characteristics were obtained on single crystal substrates without post-annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 560: Symposium E – Luminescent Materials , 1999 , 59
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Vecht, A., Smith, D. W., Chadha, S. S., and Gibbons, C. S., J. Vac. Sci. Technol. B12, p.781 (1994).Google Scholar
2. Itoh, S., Yoloyama, M., and Morimoto, K., J. Vac. Sci. Technol. A5, p.3430 (1987).Google Scholar
3. Itoh, S., Toki, H., Sato, Y., Morimoto, K., and Kishino, T., J. Electrochem. Soc. 138, p. 1509 (1991).Google Scholar
4. Kalkhoran, N. M., Trivedi, D. A., Halverson, W. D., and Vernon, S. M. in Flat Panel Display III, edited by Fulks, R. T., Parsons, G. N., Slobodin, D. E., and Yuzuriha, T. H. (Mat. Res. Soc. Symp. Proc. 471, San Francisco, CA 1997), p.293–298 Google Scholar
5. Omata, T., Ueda, N., Ueda, K., and Kawazoe, H., Appl. Phys. Lett. 64, p. 1077 (1994).Google Scholar
6. Yu, C. F. and Lin, P., J. Appl. Phys. 79, p.7191 (1996).Google Scholar
7. Hsu, K.H., Yang, M.R., and Chen, K.S., J. Mater. Sci.EL. 9, p.283 (1998).Google Scholar
8. Jeong, I.K., Park, H. L., and Mho, S.I., Solid State Commun. 105, p. 179 (1998).Google Scholar
9. Hsieh, I. J., Feng, M. S., Kuo, K. T., and Lin, P., J. Electrochem. Soc. 141, p.1617 (1994).Google Scholar
10. Lee, Y. E., Norton, D. P., and Budai, J. D., Appl. Phys. Lett. (unpublished).Google Scholar
11. Shea, L. E., Datta, R. K., and Brown, J. J. Jr., J. Electrochem. Soc. 141, p.1950 (1994).Google Scholar
12. Tran, T. K., Park, W., Tomm, J. W., Wagner, B. K., Jacobsen, S. M., Summers, C. J., Yocom, P. N., and McCelland, S. K., J. Appl. Phys. 78, p.5691 (1995).Google Scholar