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ZnBeMgO thin films based UV Detectors by Spin Coating

Published online by Cambridge University Press:  23 May 2011

Neeraj Panwar*
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico-00931, USA
J. Liriano
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico-00931, USA
Ram S. Katiyar*
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, Puerto Rico-00931, USA
*
Corresponding authors: [email protected] , [email protected]
Corresponding authors: [email protected] , [email protected]
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Abstract

Be and Mg co-doped ZnO films Zn1-x-yBexMgyO (0 ≤ x ≤ 0.10, 0 ≤y ≤ 0.20) have been deposited for the first time by novel chemical deposition or spin coating method. From the x-ray diffraction patterns it is noticed that the pristine ZnO film exhibits wurtzite polycrystalline structure, however, co-doped films are (0002) preferentially oriented. The (0002) peak intensity also increases with the corresponding increase in dopants concentrations. The systematic decrease in the c-axis lattice parameter value in the co-doped films as compared to pure ZnO film suggests the incorporation of smaller ions Be+2/Mg+2 at Zn+2 site. From the optical transmittance measurement it is noticed that all the films exhibited almost 80% transmittance in the visible region with sharp and single absorption edges in the UV region. The cut-off wavelength shifts from 375nm for the ZnO film to 330nm with 10 Be and 20% Mg co-doped film. The bandgap calculations revealed an increase in bandgap from 3.26eV (ZnO) to 3.60eV (Zn0.7Be0.1Mg0.2O) film. Such an increase in the co-doped films fabricated by a much simpler and cheaper process is very useful in the realization of UV radiation detection without having little interference from the visible light.

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Sang, W., Fang, Y., Fan, J., He, Y., Min, J., Qian, Y., J. Crystal Growth 299 272 (2007).Google Scholar
2. Ghosh, T., Basak, D., Nanotechnology 21 375202 (2010).Google Scholar
3. Ghosh, R., Basak, D., J. Appl. Phys. 101 113111 (2007).Google Scholar
4. Li, C., Meng, F.Y., Zhang, S., Wang, J.Q., J. Crystal Growth 312 1929 (2010).Google Scholar
5. Zhang, X., Li, X. M., Chen, T. L., Zhang, C. Y., Yu, W. D., Appl. Phys. Lett. 87 092101 (2005).Google Scholar
6. Kong, J. F., Shen, W. Z., Zhang, Y. W., Yang, C., Li, X. M., Appl. Phys. Lett. 92 191910 (2008).Google Scholar
7. Ryu, Y. R., Lee, T. S., Lubguban, J. A., Corman, A. B., White, H. W., Leem, J. H., Han, M. S., Park, Y. S., Youn, C. J., Kim, W. J., Appl. Phys. Lett. 88 052103 (2006).Google Scholar
8. Ding, S. F., Fan, G. H., Li, S. T., Chen, K., Xiao, B., Physica B 394 (2007) 127.Google Scholar
9. Yang, C., Li, X. M., Gu, Y. F., Yu, W. D., Gao, X. D., Zhang, Y. W., Appl. Phys. Lett. 93 112114 (2008).Google Scholar
10. Yang, C., Li, X. M., Yu, W. D., Gao, X. D., Cao, X., Li, Y. Z., J. Phys. D Appl Phys. 42 152002 (2009).Google Scholar
11. Yang, C., Li, X. M., Gao, X. D., Cao, X., Yang, R., Li, Y. Z., J. Cryst. Growth 312 978 (2010).Google Scholar
12. Panwar, N., Liriano, J. and Katiyar, R. S., J. Alloys Compnd. 509 1222 (2011).Google Scholar