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Zinc Diffusion in GaAs-AIGaAs Heterojunction Bipolar Transistor Structures

Published online by Cambridge University Press:  28 February 2011

W. S. Hobson ,
S. J. Pearton  and
A. S. Jordan
W. S. Hobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue Murray Hill, NJ 07974
A. S. Jordan
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue Murray Hill, NJ 07974
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Abstract

We have examined the diffusion of Zn from the base of GaAs-AIGaAs heterojunction bipolar transistor (HBT) structures during growth by organometallic vapor phase epitaxy. The role of Si doping in the emitter-contact, emitter, and collector/subcollector in enhancing the Zn diffusion has been determined by separately doping each layer. For a growth temperature of 675°C Zn shows no observable redistribution up to concentrations of 3x1019 cm−3 without Si doping. The addition of Si to the adjacent AIGaAs emitter and GaAs collector/subcollector layers causes significant diffusion from the base, while Si doping of the GaAs emitter-contact results in even greater Zn redistribution. Silicon counter-doping in the base region retards the Zn diffusion. These results are consistent with a recent model which shows that the n-type surface layer enhances the formation of gallium interstitials which diffuse into the structure and displace the Zn in the base via a kick-out mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 321
Copyright
Copyright © Materials Research Society 1990

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References

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