Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T09:47:43.338Z Has data issue: false hasContentIssue false
  • English
  • Français

Yield Stress of Czochralski Silicon–The Effect Of Impurities and Oxygen Precipitate Morphology

Published online by Cambridge University Press:  28 February 2011

J. D. Lawrence  and
H. L. Tsai
J. D. Lawrence
Affiliation:
Central Research Laboratories, Texas Instruments Inc. P.O. Box 225936, MS-147, Dallas, TX 75265
H. L. Tsai
Affiliation:
Central Research Laboratories, Texas Instruments Inc. P.O. Box 225936, MS-147, Dallas, TX 75265
Get access

Abstract

Quantitative measurements of the mechanical properties of Czochralski silicon were made. Samples were strained in tension to determine the yield characteristics (at 800°C) of silicon crystals which had been subjected to various heat treatments and which contained various concentrations of oxygen and carbon. The heat treatments included single step, two step (nucleation and growth) and three step (dissolution, nucleation and growth) annealing. Carbon concentration was found to affect both the rate of oxygen precipitation and the resulting precipitate morphology but did not have a direct effect on the yield stress of unprecipitated samples. There was a clear correlation between the amount of precipitated oxygen and the magnitude of the upper yield stress in samples with the same initial oxygen concentration. Precipitation caused a reduction in the upper yield stress for all precipitate morphologies, but the reduction was less severe (for a given amount of precipitation) where the precipitates were fine grains (<200Å) than where they were larger polyhedra or plates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 389
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kishino, S., Aoshima, T., Yoshinaka, A., Shimizu, H., and Ono, M., Jpn. J. Appl. Phys. 23, L9 (1984)Google Scholar
2 Patel, J.R., Discuss. Faraday Soc. 38, 201 (1964)Google Scholar
3 Hu, S.M. and Patrick, W.J., J. Appl. Phys. 46, 1869 (1975)Google Scholar
4 Hu, S.M., Appl. Phys. Lett. 31,53 (1977)CrossRefGoogle Scholar
5. Yonenaga, I. and Sumino, K., phys. stat. sol. (a) 50,685 (1978)Google Scholar
6. Sumino, K., Harada, H., Yonenaga, I., Jpn. J. Appl. Phys. 19, L49 (1980)Google Scholar
7. Sumino, K. and Yonenaga, I., Jpn. J. Appl. Phys. 9, L685 (1981)Google Scholar
8. Harada, H. and Sumino, K., J. Appl. Phys. 53, 4838 (1982)Google Scholar
9. Yonenaga, I. and Sumino, K., Jpn. J. Apph. Phys. 21, 47 (1982)Google Scholar
10. Chiou, H-D., Moody, J., Sandfort, R., and Shimura, F., VLSI Science and Technology 1984, Bean, K.E. and Rozgonyi, G.A. eds., The Electrochem. Soc. p. 54.Google Scholar
11 Yonenaga, I. and Sumino, K., J. Appl. Phys. 56, 2346 (1984)Google Scholar
12. Yasutake, K., Umeno, M., and Kawabe, H., Appl. Phys. Lett. 37,789 (1980)Google Scholar
13. Yasutake, K., Umeno, M., and Kawabe, H., phys. stat. sol. 69,333 (1982)Google Scholar
14. Tsai, H.L., J. Appl. Phys. 58, 3775 (1985)Google Scholar
15. Carpenter, R.W., Vanderschaeve, G., Varker, C.J., and Wilson, S.W., This VolumeGoogle Scholar
16. Danyluk, S., Lim, D.S., and Kalejs, J., J. Mat. Sci. Lett. 4, 1135 (1985)Google Scholar