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YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

Published online by Cambridge University Press:  26 February 2011

G. Cui
Affiliation:
Advaxnced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
C. P. Beetz Jr
Affiliation:
Advaxnced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
B. A. Lincoln
Affiliation:
Advaxnced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
P. S. Kirlin
Affiliation:
Advaxnced Technology Materials, Inc., 7 Commerce Drive, Danbury, CT 06810
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Abstract

The deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

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