Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T07:33:01.412Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Studies of Gasb/Sb Heterostructure and Multilayers: A New Semimetal/Semiconductor System

Published online by Cambridge University Press:  25 February 2011

A. Vigliante ,
P. C. Chow ,
S. C. Moss ,
J. A. Dura ,
W. C. Wang  and
T. D. Golding
A. Vigliante
Affiliation:
University of Houston, Department of Physics and Space Vacuum Epitaxy Center, Houston, TX 77204–5506.
P. C. Chow
Affiliation:
University of Houston, Department of Physics and Space Vacuum Epitaxy Center, Houston, TX 77204–5506.
S. C. Moss
Affiliation:
University of Houston, Department of Physics and Space Vacuum Epitaxy Center, Houston, TX 77204–5506.
J. A. Dura
Affiliation:
University of Houston, Department of Physics and Space Vacuum Epitaxy Center, Houston, TX 77204–5506.
W. C. Wang
Affiliation:
University of Houston, Department of Physics and Space Vacuum Epitaxy Center, Houston, TX 77204–5506.
T. D. Golding
Affiliation:
University of Houston, Department of Physics and Space Vacuum Epitaxy Center, Houston, TX 77204–5506.
Get access

Extract

A substantial research effort has been devoted to the growth of metals on semiconductors [1], motivated in part by the necessity of electrical contacts and interconnects in semiconducting devices and by the possibility of new physical phenomena and devices derived from the combination of electronic properties of the two materials. Semimetals provide an alternative for applications involving electrical contact, for which their unique transport, optical, and nonlinear properties make them attractive in hybrid devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 721
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. For an excellent review see: Sands, T., Palmstrom, C. J., Harbison, J. P., Keramidas, V. G., Tabatanaie, N., Cheeks, T. L., Ramesh, R. and Silberberg, Y., Materials Science Reports, 5 (3), 99 (1990).Google Scholar
2. Harbison, J. P., Sands, T., Tabatabie, N., Chan, W. K., Florez, L. T. and Keramidas, V. G., Appl. Phys. Lett. 53, 1717 (1988).Google Scholar
3. Golding, T.D., Dura, J.A., Wang, W.C., Vigliante, A., Moss, S.C., Chen, H.C., Miller, J.H., Hoffman, C.A. and Meyer, J.R., Appl. Phys. Lett. (to be published).Google Scholar
4. Strukturbericht (Leipzig: Akademische Verlagsgesellshaft, 1931–1943)Google Scholar
5. Warren, B.E., X-Ray Diffraction, ed. (Dover, New York, reprint 1990) p. 25.Google Scholar