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X-Ray Studies of GaAs/Si and ZnS/Si

Published online by Cambridge University Press:  26 February 2011

H. M. Kim ,
Y-W Choi ,
S. Vernon ,
P. S. Moise  and
C. R. Wie
H. M. Kim
Affiliation:
SUNY-Buffalo, Dept. of ECE, 201 Bonner, Amherst, NY 14260
Y-W Choi
Affiliation:
SUNY-Buffalo, Dept. of ECE, 201 Bonner, Amherst, NY 14260
S. Vernon
Affiliation:
SPIRE Corporation, Bedford, MA 01730
P. S. Moise
Affiliation:
SPIRE Corporation, Bedford, MA 01730
C. R. Wie
Affiliation:
SUNY-Buffalo, Dept. of ECE, 201 Bonner, Amherst, NY 14260
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Abstract

The MOCVD-grown layers of GaAs/Si(001), InP/GaAs/Si(001), and ZnS/Si(111) were studied using X-ray rocking curve (XRC), double crystal topography (DCT), and Nomarski phase contrast microscopy. The layer qualities of GaAs/Si, InP/GaAs, and InP/GaAs/Si from the XRC full width at half maximum (FWHM) agreed well with these determined from the Nomarski phase contrast microscopy. The in-plane lattice mismatch (parallel X-ray strain) was 3.71% for GaAs/Si. In the double heteroepitaxial layer (InP/GaAs/Si), the parallel X-ray strain of GaAs was 4.03% with respect to Si. The parallel X-ray strain was larger than the perpendicular X-ray strain in GaAs/Si, perhaps due to the mismatch in thermal expansion coefficients between GaAs and Si. Dislocation densities estimated from the rocking curve linewidth were 5.30 × 107 cm−2 for GaAs/Si, 3.27 × 108 cm−2 for InP/GaAs. We also present the double crystal X-ray topographs of the III-V/Si and II-VI/Si samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 323
Copyright
Copyright © Materials Research Society 1989

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References

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