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X-Ray Section Topography of Hydrogen Precipitates in Silicon

Published online by Cambridge University Press:  28 February 2011

S.F. Cui ,
G.S. Green  and
B.K. Tanner
S.F. Cui
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, U.K
G.S. Green
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, U.K
B.K. Tanner
Affiliation:
Department of Physics, University of Durham, South Road, Durham, DH1 3LE, U.K
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Abstract

Spherical strain centres produced by annealing of silicon crystals grown in a hydrogen atmosphere have been studied by X-ray section topography. Excellent agreement has been found between experimental images and those simulated by numerical solution of Takagi's equations. The contrast differences between images in four reflections are examined and recommendations made as to the most suitable conditions for the study of oxygen precipitates in processed silicon wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 71
Copyright
Copyright © Materials Research Society 1989

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References

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[8] Green, G.S. and Tanner, B.K., Inst. Phys. Conf. Ser. 87 627 (1987)Google Scholar