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X-Ray Scattering Studies of SioX/Si/Ge(001)

Published online by Cambridge University Press:  21 February 2011

S.D. Kosowsky ,
C.-H. Hsu ,
P.S. Pershan ,
J. Bevk  and
B.S. Freer
S.D. Kosowsky
Affiliation:
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
C.-H. Hsu
Affiliation:
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
P.S. Pershan
Affiliation:
Department of Physics and Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
J. Bevk
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
B.S. Freer
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
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Abstract

X-ray scattering has been used to study the interfacial structure of a dry oxide grown at room temperature on a system consisting of four layers of Si epitaxially grown on Ge(001). A 2x1 structure is seen at the interface, whose shape parallels the underlying terrace structure. The model producing the best fit to the specular reflectivity data consists of a Ge single crystal substrate, five intermediate ordered layers and an amorphous oxide layer. X-ray Photoelectron Spectroscopy (XPS) data is also presented, consistent with the specular model, which together indicate that not all of Si is oxidized and that there exists Ge in the SiOx amorphous layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 221
Copyright
Copyright © Materials Research Society 1994

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