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X-Ray Scattering Studies of Interfacial Microstructures in Inx, Ga1−x As/GaAs Superlattices

Published online by Cambridge University Press:  15 February 2011

Z. H. Ming ,
Y. L. Soo ,
S. Huang ,
Y. H. Kao ,
K. Stair ,
G. Devane  and
C. Choi-Feng
Z. H. Ming
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
Y. L. Soo
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
S. Huang
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
Y. H. Kao
Affiliation:
Department of Physics, SUNY at Buffalo, Buffalo, NY 14260
K. Stair
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
G. Devane
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
C. Choi-Feng
Affiliation:
Amoco Technology Company, P.O. Box 3011, Naperville, IL 60566
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Abstract

Interfacial microstructures in 100-period InxGa1−xAs(15Å)/GaAs(100Å) superlattices grown on GaAs (100) substrates by molecular beam epitaxy were studied by using large angle x-ray scattering techniques. Unusual satellite peaks in the lateral direction parallel to the sample surface were observed in a sample with x = 0.535 grown at 480°C, indicating an in-plane structural ordering. This result is confirmed by high resolution transmission electron microscopy observations that thickness modulation in the InxGa1−xAs layers gives rise to long-range lateral periodic arrays of cluster-like microstructures with spacing on the order of a few hundred Ångstroms. This thickness modulation is found to occur only in [110] direction, thus the material can be viewed as a somewhat disordered array of grown-in parallel quantum wires.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 375: Symposia AA – Applications of Synchrotron Radiation Techniques to Materials Science , 1994 , 171
Copyright
Copyright © Materials Research Society 1995

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References

1. Lang, D.V., People, R., Bean, J.C. and Sergent, A.M., Appl. Phys. Lett. 47, 1333(1985).Google Scholar
2. Matthews, J.W. and Blakeslee, A.E., J. Crystal Growth, 27, 118(1974).Google Scholar
3. Ming, Z.H., Krol, A., Soo, Y.L., Kao, Y.H., Park, J.S., and Wang, K.L., Phys. Rev. B47, 16373(1993).Google Scholar
4. HMing, Z., Soo, Y.L., Huang, S., Kao, Y.H., Stair, K., Devane, G., and Choi-Feng, C., to be published.Google Scholar
5. Guha, S., Madhukar, A., and Chen, Li, Appl. Phys. Lett. 56, 2304(1990).Google Scholar
6. Guha, S., Madhukar, A., and Rajkumar, K.C., Appl. Phys. Lett. 57, 2110(1990).Google Scholar
7. Guha, S., Rajkumar, K.C., and Madhukar, A., J. Crystal Growth, 111, 434(1991).Google Scholar
8. Ponchet, A. and Rocher, A., Emery, J.-Y., Starck, C., and Goldstein, L., J. Appl. Phys. 74, 3778(1993).Google Scholar
9. Cheng, K.Y., Hsieh, K.C., and Baillargeon, J.N., Appl. Phys. Lett, 60, 2892(1992).Google Scholar
10. Grundmann, M., Lienert, U., Bimberg, D., Fischer-Colbrie, A. and Miller, J.N., Appl. Phys. Lett. 55, 1765(1989).Google Scholar