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X-Ray Reflectivity and GISAXS Study of Derelaxation in Kr Implanted Si

Published online by Cambridge University Press:  21 March 2011

P. Duč ,
B. Pivac ,
O. Milat ,
S. Bernstorff  and
I Zulim
P. Duč
Affiliation:
Rudjer Bošković, P.O.Box 180, HR-10000 Zagreb, Croatia Sinchrotrone Trieste, SS 14km 163.5, I-34012 Basovizza (TS), Italy
B. Pivac
Affiliation:
Rudjer Bošković, P.O.Box 180, HR-10000 Zagreb, Croatia
O. Milat
Affiliation:
Institute of Physics, P.O. Box 1010, HR-10000 Zagreb, Croatia
S. Bernstorff
Affiliation:
Sinchrotrone Trieste, SS 14km 163.5, I-34012 Basovizza (TS), Italy
I Zulim
Affiliation:
Faculty of Electrical and Mechanical Engineering, and Naval Architecture, University of Spilt, R. Bošković b.b. HR-21000 Split, Croatia
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Abstract

The structural changes induced in single crystal silicon implanted with Krypton above the amorphisation threshold were studied by X-ray reflectivity together with Grazing Incidence Small Angle X-ray Scattering technique. Silicon samples were implanted with Krypton with two different ion energies. A well-defined layer, 220 nm thick of amorphous silicon, rich in Krypton, was formed below the top, undisturbed layer. A series of samples consist of as-implanted, relaxed, and a number of samples with increased level of defects induced by additional Kr implantation. Additional implantation caused changes in the films composition and thickness, which was well evidenced in reflectivity curve, while only minor changes of surface roughness and critical angle were detected in GISAXS spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 678: Symposia EE – Applications of Synchrotron Radiation Techniques…IV , 2001 , EE6.4.1
Copyright
Copyright © Materials Research Society 2001

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References

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