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X-Ray, Photoluminescence and Etching Studies of Indium-Doped LPE GaAs Layers

Published online by Cambridge University Press:  26 February 2011

J.F. Chen ,
C. R. Wie  and
F. A. Junga
J.F. Chen
Affiliation:
SUNY-Buffalo, 201 Bonner Hall, Dept. of ECE, Amherst, NY 14260
C. R. Wie
Affiliation:
SUNY-Buffalo, 201 Bonner Hall, Dept. of ECE, Amherst, NY 14260
F. A. Junga
Affiliation:
Lockheed Palo Alto Research Lab, Palo Alto, CA 94304
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Abstract

The effects of In doping on the structural properties of liquid phase epitaxially (LPE) grown GaAs layers are studied. The distribution coefficient of In in the GaAs at 800 ° C was determined to be 0.033 which was consistent with the value calculated from the pseudobinary phase diagram of the ternary system at a dilute In concentration. The full widths at halfmaximum (FWHM) of x-ray double crystal rocking curves show that a GaAs epi-layer of good crystalline quality can be obtained by doping In to a concentration up to 4.3 × 1019 cm−3, beyond which a sharp increase in the FWHM is observed. Etch pit density (EPD) measurement shows that the dislocation density is reduced by doping the epi-layer with In. At the optimal In concentration of 2.4 × 1019 cm−3, the EPD is reduced by a factor of 20 when measured at the surface of a 9 um thick epilayer.

Photoluminesce measurements made at 15 K show two sharp emission spectra near the bandedge. The relative intensities of the two emissions, I(l.49eV)/I(l.5eV) are reduced with increasing In content. This suggests that incorporation of Carbon acceptors is suppressed by In doping in the GaAs epilayers. The FWHM as small as 5 meV of the bandedge transition was obtained for the epi-layer doped with In concentration of 2.4 × 1019 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 9
Copyright
Copyright © Materials Research Society 1989

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References

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