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X-ray Photoemission Determination of the Surface Fermi Level Motion and Pinning on n- and p-GaN during the Formation of Au, Ni, and Ti Metal Contacts

Published online by Cambridge University Press:  21 March 2011

Kimberly A. Rickert ,
Jong Kyu Kim ,
Jong-Lam Lee ,
Franz J. Himpsel ,
Arthur B. Ellis  and
T. F. Kuech
Kimberly A. Rickert
Affiliation:
Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706
Jong Kyu Kim
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
Jong-Lam Lee
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
Franz J. Himpsel
Affiliation:
Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706
Arthur B. Ellis
Affiliation:
Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706
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Abstract

Synchrotron radiation-based x-ray photoemission spectroscopy was used to study the Fermi level position within the band gap for thin metal overlayers of Au, Ni, and Ti on n-GaN and p-GaN. The Fermi level position was determined with the measured Fermi edge of the metal on the sample in order to correct for the presence of non-equilibrium effects. There are two different behaviors observed for the three metals studied. For Au and Ti, the surface Fermi positions on n-GaN and p-GaN are roughly 0.5 eV apart within the band gap. For Ni, the n-GaN and p-GaN have a Schottky barrier that forms at the same place at the gap.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I13.4.1
Copyright
Copyright © Materials Research Society 2002

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