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X-Ray Photoelectron Spectroscopy Analysis of Silicon Oxide Deposited by a Nitrous Oxide/Silane Glow Discharge

Published online by Cambridge University Press:  21 February 2011

J. H. Thomas III  and
G. Kaganowicz
J. H. Thomas III
Affiliation:
RCA Laboratories, Princeton, NJ 08540
G. Kaganowicz
Affiliation:
RCA Laboratories, Princeton, NJ 08540
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Abstract

Thin layers (100Å) of SiO were deposited at room temperature in a RF glow discharge in a nitrous oxige – silane ambient. Surface properties of the deposit were studied using quantitative and qualitative XPS and AES. Abrupt changes in the energy difference between the O 1s and Si 2p photoelectron peaks, the O/Si stoichiometric ratio, and nitrogen incorporation are observed with varying amounts of silane in the gas ambient (for a fixed nitrous oxide flow). The abrupt change in binding energy difference correlates with the presence of free oxygen in the glow discharge as measured by in-situ mass spectrometry. At silane flows below the abrupt change, nitrogen is excluded from the deposit and the surfaces appear to be chemically silicon dioxide with a O/Si ratio of 2.1 as determined from quantitative XPS analysis. Above the abrupt change, the films exhibit a surface composition of less than 2.0.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 293
Copyright
Copyright © Materials Research Society 1985

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