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X-Ray Photoelectron Diffraction Measurements of Hexagonal GaN(0004) Thin Films

Published online by Cambridge University Press:  10 February 2011

R. Denecke ,
J. Morais ,
C. Wetzel ,
J. Liesegang ,
E. E. Haller  and
C. S. Fadley
R. Denecke
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Physics, University of California, Davis, Davis, CA 95616, USA
J. Morais
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
C. Wetzel
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
J. Liesegang
Affiliation:
Lawrence Berkeley National Laboratory, Materials Science Division, Berkeley, CA 94720, USA
E. E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Materials Science, University of California, Berkeley, Berkeley, CA 94720, USA
C. S. Fadley
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA Department of Physics, University of California, Davis, Davis, CA 95616, USA
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Abstract

We report on the first scanned-angle x-ray photoelectron diffraction measurements on GaN(0001) in the wurtzite structure, as grown on sapphire substrates using MOCVD. These as-grown samples reveal forward scattering peaks in agreement with a theoretical calculation using a single scattering cluster calculation. The surface contamination by O and C does not exhibit any clear structure. From the combination of experiment and theoretical calculation and from a simple intensity ratio argument the surface termination for these samples could be determined to be N. The data also indicate that C is on average closer to the GaN surface than O.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 263
Copyright
Copyright © Materials Research Society 1997

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References

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