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X-Ray Observation of Stress Gradients and Precipitation in Passivated AL-0.5% Cu Films

Published online by Cambridge University Press:  15 February 2011

Paul R. Besser
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA
Sean Brennan
Affiliation:
Stanford Synchrotron Radiatio n Laboratory, Menlo Park, CA
John C. Bravman
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA
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Abstract

Grazing incidence x-ray scattering has been used with a synchrotron source to characterize the stress gradients during thermal cycling in 1.0 μm thick Al-0.5%Cu films passivated with silicon nitride. The films were cycled between room temperature and 400°C. The stress-temperature behavior is quantitatively similar to that measured for unpassivated films. The presence of an inhomogeneous strain is documented at low temperatures. The dissolution and precipitation of Al2Cu is suggested as an explanation for the gradients and asymmetric x-ray peak broadening.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. See, for instance, Mayumi, S. et al., IEEE Int. Red. Phys. Symp. Proc., 15 (1987).Google Scholar
2. Frear, D.R. et al., Proceedings of the SPIE 1596, 72 (1991).Google Scholar
3. Flinn, P.A. and Chiang, C., J. AppI. Phys 67(6), 2927 (1990).Google Scholar
4. Besser, P.R., Mack, A.S., Fraser, D.B., and Bravman, J.C., To be Published in J. Elec. Soc. (June,1993).Google Scholar
5. Doerner, M.F. and Brennan, S., J. AppI. Phys. 63(1), 126 (1988).Google Scholar
6. Brennan, S.. Surface Science 152–153, 19 (1985).CrossRefGoogle Scholar
7. Shute, C.J. and Cohen, J.B.. J. AppI. Phys. 70(4), 2104 (1991).Google Scholar
8. Venkatraman, R., Besser, P.R., Brennan, S., and Bravman, J.C., MRS Symp.Proc. Vol.239, 227(1992).Google Scholar
9. Besser, P.R., Bader, S., and Bravman, J.C., Accepted to 1993 MRS Spring Conference Proc. (1993).Google Scholar
10. Flinn, P.A., Gardner, D.S., and Nix, W.D., IEEE Trans. Elec. Dev. 35, 2160 (1987).Google Scholar
11. Venkatraman, R., Ph.D. Dissertation, Stanford University (1992).Google Scholar
12. Shute, C.J. and Cohen, J.B., Mater. Sci. Eng. A149, 167 (1992).Google Scholar
13. Shute, C.J., Cohen, J.B., and Jeannotte, D.A.. MRS Symp.Proc. Vol. 130, 29 (1989).CrossRefGoogle Scholar
14. Sanchez, J.E. Jr. and Arzt, E., Scripta Metall. 27, 285 (1992).Google Scholar
15. Noyan, I.C. and Nguyen, L.T., Adv. X-ray Anal. 32, 355 (1989).Google Scholar
16. Vassamillet, L.F. and King, H.W.. Adv. X-ray Anal. 6, 142 (1963).Google Scholar
17. Venkatraman, R. et al., J. Elec. Mater. 19(11) 1231 (1992).Google Scholar
18. Frear, D.R., Sanchez, J.E., Romig, A.D. Jr. and Morris, J.W. Jr. Met. Trans. A 21A, 2449 (1990).Google Scholar
19. Michael, R., Romig, A.D. Jr., and Frear, D.R., MRS Symp.Proc. Vol.229, 303 (1990).Google Scholar
20. Sanchez, J.E. Jr., McKnelly, L.T., and Morric, J.W. Jr., MRS Symp.Proc. Vol. 230, 67 (1992).Google Scholar