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X-RAY MONITORING OF InGaAsP LAYERS GROWN BY VAPOR PHASE EPITAXY

Published online by Cambridge University Press:  28 February 2011

A. T. MACRANDER  and
K. STREGE
A. T. MACRANDER
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J., 07974
K. STREGE
Affiliation:
AT&T Bell Laboratories, Murray Hill, N.J., 07974
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Abstract

X-ray double crystal diffractometry provides a means of rapidly characterizing epitaxial structures. Because the technique is rapid and nondestructive and because it yields a wealth of information, rocking curves have been routinely obtained and extensively studied by us. We present here selective results illustrating the typical progression in layer quality which occurs from the initial growth in a reactor to the growth of device quality material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 115
Copyright
Copyright © Materials Research Society 1986

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References

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