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X-Ray Microbeam Studies of Electromigration

Published online by Cambridge University Press:  10 February 2011

G. S. Cargill III ,
A. C. Ho ,
K. J. Hwang ,
H. K. Kao ,
P.-C. Wang  and
C.-K. Hu
G. S. Cargill III
Affiliation:
Lehigh University, Bethlehem, PA 18015, [email protected]
A. C. Ho
Affiliation:
Lehigh University, Bethlehem, PA 18015, [email protected]
K. J. Hwang
Affiliation:
Lehigh University, Bethlehem, PA 18015, [email protected]
H. K. Kao
Affiliation:
Lehigh University, Bethlehem, PA 18015, [email protected]
P.-C. Wang
Affiliation:
IBM Microelectronics, Hopewell Junction, NY 12533
C.-K. Hu
Affiliation:
IBM Research, Yorktown Heights, NY 10598
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Abstract

The interplay between stress and electromigration has been recognized since I. A. Blech et al. used x-ray topography in 1976 to demonstrate that stress gradients developed during electromigration. Availability of high brightness synchrotron x-ray sources, high stability energy dispersive detectors, high resolution area detectors, and pinholes, capillaries and other optical elements for forming x-ray microbeams, has made possible more quantitative, real time measurements of strains and composition changes which develop in polycrystalline metal conductor lines during electromigration. This paper describes advances made in this area, implications of results which have been obtained, and prospects for further progress.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 153
Copyright
Copyright © Materials Research Society 1999

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References

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