Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T17:59:22.928Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Lithography Studies of Polysilane using a Laser Plasma X-Ray Source

Published online by Cambridge University Press:  25 February 2011

Glenn D. Kubiak ,
Duane A. Outka  and
John M. Zeigler
Glenn D. Kubiak
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
Duane A. Outka
Affiliation:
Sandia National Laboratories, Livermore, CA 94551-0969
John M. Zeigler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
Get access

Abstract

A laser-generated plasma source of monochromatized soft x-rays has been used to study the x-ray lithographic resist properties of poly(cyclohexylmethylsilane-co-dimethylsilane). X-ray absorption spectra near the SiL2,3 edge of unexposed samples were measured to guide the choice of exposure photon energy. We find that poly(cyclohexyl-methylsilane-co-dimethylsilane) exhibits positive tone at x-ray energies near 105 eV (Si 2p resonance), a sensitivity of 1000 mJ/cm2 and a contrast of 1.5. Sensitivity is found to increase markedly when exposed samples are held in air before development. Using simple wire mesh masks, estimates of the minimum achievable linewidth have been made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 615
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Heuberger, A., J. Vac. Sci. Technol. B 6, 107 (1988).CrossRefGoogle Scholar
2. Peters, D. W., Drumheller, J. P., Frankel, R. D., Kaplan, A. S., Preston, S. M., and Tomes, D. N., Proc. SPIE 923, 28 (1988).CrossRefGoogle Scholar
3. Lai, B., Cerrina, F., and Underwood, J. H., SPIE 563, 174 (1985); F. Cerrina, J. Imag. Sci. 30, 80 (1986).Google Scholar
4. Mochiji, K., Kimura, T., Obayashi, H., and Maezawa, H., Proc. SPIE 539, 56 (1985).CrossRefGoogle Scholar
5. Mancini, D., Taylor, J. W., West, R. C., Maxka, J., and Cerrina, F., Abstracts of the 1985 Univ. of Wisconsin Synchrotron Radiation Center User's Mtg.Google Scholar
6. Taylor, G. N., Hellman, M. Y., Wolf, T. M., and Zeigler, J. M., Proc. SPIE 920, in press (1988).Google Scholar
7. Hofer, D. C., Miller, R. D., Willson, C. G., and Neureuther, A., Proc. SPIE 469, 108 (1984).CrossRefGoogle Scholar
8. Zeigler, J. M., Harrah, L. A., and Johnson, A. W., Proc. SPIE 539, 166 (1985).CrossRefGoogle Scholar
9. Tooman, T. P., J. Opt. Soc. Amer. A, in press (1989).Google Scholar
10. Hettrick, M. C. and Underwood, J. H., Appl. Opt. 25, 4228 (1986).CrossRefGoogle Scholar
11. For the compounds Si(CH3)4 and SiH4, see Sodhi, R.N.S., Daviel, S., and Brion, C.E., J. Electron. Spectrosc. Relat. Phenom. 35, 45 (1985).CrossRefGoogle Scholar
12. For the compounds SiCl4, SiO2 and SiF4, see Dehmer, J. L., J. Chem. Phys. 56, 4496 (1972).CrossRefGoogle Scholar
13. Takeda, K., Fujino, M., Seki, K., and Inokuchi, H., Phys. Rev. B 36, 8129 (1987).CrossRefGoogle Scholar
14. Harrah, L. A. and Zeigler, J. M., Macromol. 20, 601 (1987).CrossRefGoogle Scholar
15. Loubriel, G. and Zeigler, J. M., Phys. Rev. B 33, 4203 (1986).CrossRefGoogle Scholar
16. Henke, B. L., Lee, P., Tanaka, T. J., Shimabukuro, R. L., and Fujikawa, B. K., Atom. Data Nuc. Data Tables 27, 1 (1982).CrossRefGoogle Scholar
17. Gutierrez, A. R. and Cox, R. J., Polym. Photochem. 7, 517 (1986).CrossRefGoogle Scholar