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X-Ray Diffraction Study of a Thin GaAs Film on Si(100)

Published online by Cambridge University Press:  26 February 2011

Arun S. Bommannavar ,
C. J. Sparks ,
A. Habenschuss ,
G. E. Ice ,
A. Dhere ,
H. Morkoc  and
H. Zabel
Arun S. Bommannavar
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
C. J. Sparks
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
A. Habenschuss
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
G. E. Ice
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
A. Dhere
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
H. Morkoc
Affiliation:
Oak Ridge National Laboratory, P. O. Box X, Oak Ridge, TN 37831
H. Zabel
Affiliation:
University of Illinois, Urbana, IL 61801
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Abstract

A 900A single crystalline GaAs film deposited by molecular beam epitaxy (MBE) on a silicon crystal cut 4.1° from (001) surface was characterized with X-ray diffraction measurements of the mosaic spread, particle size and strain distribution, and lattice parameter. The GaAs film had a larger mosaic spread in the direction of the steps of the silicon surface and coherent particle sizes of about 900 Å compared to the estimated film thickness of approximately 1000 Å. Superlattice reflections gave an ordered domain size of about 330 Å. There is a residual strain gradient in the film which is nearly linear with the lattice constant differing by about 0.044 Å between the surface of the film and its interface with the silicon substrate. Lattice parameter measurements indicate a small expansion of 0.13% perpendicular to the plane of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 223
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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