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X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers

Published online by Cambridge University Press:  15 February 2011

S. Nayak ,
J. M. Redwing ,
T. F. Kuech ,
Y.-H. Phang ,
D. E. Savage  and
M. G. Lagally
S. Nayak
Affiliation:
Dept. of Chemical Engineering, University of Wisconsin, Madison, WI, 53706
J. M. Redwing
Affiliation:
Dept. of Chemical Engineering, University of Wisconsin, Madison, WI, 53706
T. F. Kuech
Affiliation:
Dept. of Chemical Engineering, University of Wisconsin, Madison, WI, 53706
Y.-H. Phang
Affiliation:
Dept. of Materials Science and Engineering, University of Wisconsin, Madison, WI, 53706
D. E. Savage
Affiliation:
Dept. of Materials Science and Engineering, University of Wisconsin, Madison, WI, 53706
M. G. Lagally
Affiliation:
Dept. of Materials Science and Engineering, University of Wisconsin, Madison, WI, 53706
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Abstract

X-ray diffraction has been used to quantify the interface roughness of GaAs/AlxGa1-xAs multilayers. X-ray measurements, both θ-2θ and rocking-curve analyses, quantitatively determine the correlated and random components of the interface roughness as well as the correlation length of the roughness along the interface. The multilayer structures of GaAs/Al0.3Ga0.7As and GaAs/AlAs differ substantially in the amplitude and correlation length of the interface roughness. The change in interfacial roughness is compared to that determined from low temperature photoluminescence (PL) measurements, the conventional measure of interface uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 137
Copyright
Copyright © Materials Research Society 1993

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