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X-Ray Diffraction Determination of Critical Thickness of InAs and InP on GaAs Grown by Atomic Layer Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

A. Mazuelas ,
L. Gonzalez ,
L. Tapfer  and
F. Briones
A. Mazuelas
Affiliation:
Centro Nacional de Microelectr6nica, Serrano 144 Madrid, Spain
L. Gonzalez
Affiliation:
Centro Nacional de Microelectr6nica, Serrano 144 Madrid, Spain
L. Tapfer
Affiliation:
Cntr.Nazionale per la Ricerca e lo Sviluppo dei Materiali, Via G.Marconi 147, Mesagne (BR), Italy
F. Briones
Affiliation:
Centro Nacional de Microelectr6nica, Serrano 144 Madrid, Spain
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Abstract

Two series of samples consisting in a strained layer of InAs (InP) of different thickness, InAs N monolayers (ML) with N=1,2,3, and 4, and, InP M ML with M=2,3,4,5,6 and 7, covered by a GaAs cap layer of 200 nm were grown by Atomic Layer Molecular Beam Epitaxy (ALMBE).

The samples have been characterized by X-ray diffraction in order to measure the critical thickness of InAs and InP on GaAs.

Computer simulation using dynamical theory of X-ray diffraction is used to fit the experimental patterns. In this way we determine the composition, thickness, and strain both in the strained layer of InAs or InP and in the cap layer of GaAs.

A disagreement between simulated and experimental curves is reached at a thickness where the beginning of relaxation takes place (i.e. critical thickness). We have found that the critical thickness of InAs on GaAs(001) is 2.3 ML (0.75 nm) and the critical thickness of InP on GaAs(001) is 5.6–5.7 ML (1.71-1.74 nm), both grown by ALMBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

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References

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