Hostname: page-component-cd9895bd7-mkpzs Total loading time: 0 Render date: 2024-12-27T01:53:35.593Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Diffraction and Reflectance, Raman Scattering and Photoluminescence Characterization of Thermally Annealed Epitaxial SI1-XGEX Layers

Published online by Cambridge University Press:  25 February 2011

M. LíbeznÝ ,
I. De Wolf ,
J. Poortmans ,
A. Van Ammel ,
M. Caymax ,
V. HolÝ ,
F. Vižď ,
J. KubĚna ,
K. Werner  and
M. Ishida
M. LíbeznÝ
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Dept. Solid State Physics, Masaryk Univ., Kotláŕská, 2, 611 37 Bmo, Czech Republic
I. De Wolf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Poortmans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Van Ammel
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
V. HolÝ
Affiliation:
Dept. Solid State Physics, Masaryk Univ., Kotláŕská, 2, 611 37 Bmo, Czech Republic
F. Vižď
Affiliation:
Dept. Solid State Physics, Masaryk Univ., Kotláŕská, 2, 611 37 Bmo, Czech Republic
J. KubĚna
Affiliation:
Dept. Solid State Physics, Masaryk Univ., Kotláŕská, 2, 611 37 Bmo, Czech Republic
K. Werner
Affiliation:
DIMES, Lorentzweg 1, 2628 CJ Delft, Netherlands
M. Ishida
Affiliation:
Dept. Electrical & Electronic Eng., Toyohashi Univ. of Technology, Toyohashi 441, Japan
Get access

Abstract

Sil-xGex, undoped strained layers with a pure Si-capping layer were grown epitaxially by UHV CVD on Si (100) substrates. The samples were subjected to thermal treatments corresponding to typical deviceprocessing. Effects connected with thermally induced relaxations were studied by Raman scattering, XRD, photoluminescence (PL) and defect etching. The thickness of the layers was determined from X-ray reflectance measurement. Strain values for the as-grown and relaxed samples were extracted from Raman scattering, XRD measurements and defect etching and correlated. Sil-xGex-layer related peaks were observed in PL spectra of several samples. An explanation why those peaks are not observed in all the samples is suggested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 51
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jain, S.C. and Hayes, W., Semicond. Sdi. Technol. 6, 547 (1991)CrossRefGoogle Scholar
2. Dutartre, D., Brémond, G., Souifi, A. and Benyattou, T., Phys. Rev. B 44, 11 525 (1991)CrossRefGoogle Scholar
3. Robbins, D.J., Canham, L.T., Barnett, S.J., Pitt, A.D. and Calcott, P., Appl. Phys. Lett. 71, 1407 (1992)Google Scholar
4. Carmona, M.I. Alonso, PhD Thesis, Max-Planck Institut für Festkdrperforschung, Stuttgart, 1989 Google Scholar
5. Halliwel, M.A.G., Lyons, M.H., Davey, S.T., Hockly, M., Tuppen, C.G. and Gibbings, C.J., Semicond. Sci. Technol. 4, 10 (1989)CrossRefGoogle Scholar
6. Boer, D.K.G. de, PI-ys. Rev. B 44,489 (1991) and citations thereinGoogle Scholar
7. Int. Tables for X-Ray Crystallography, Vol. IV, Kynoch Press, Birmingham, 1974 Google Scholar
8. Chang, J.C.P., Chen, J., Fernandez, J.M., Wieder, H.H., and Kavanagh, K.L., Appl. Phys. Lett. 60, 1129 (1992)CrossRefGoogle Scholar
9. Holy, V., Kuběna, J. and Ploog, K., Phys. Status Solidi (b) 162, 347 (1990)CrossRefGoogle Scholar
10. Bartels, W.J., Hornstra, J. and Lobeek, D.J.W., Acta Cryst. A42, 539 (1986)CrossRefGoogle Scholar