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X-Ray Diffraction Analysis of the Strain of SiGeC/(100)Si Alloys

Published online by Cambridge University Press:  21 February 2011

A.E. Bair ,
T.L. Alford ,
S. Sego ,
Z. Atzmon  and
R.J. Culbertson
A.E. Bair
Affiliation:
Department of Chemical, Bio and Materials Engineering
T.L. Alford
Affiliation:
Department of Chemical, Bio and Materials Engineering
S. Sego
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
Z. Atzmon
Affiliation:
Department of Chemical, Bio and Materials Engineering
R.J. Culbertson
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
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Abstract

Samples of Si1-x-YGexCy were analyzed with a triple axis high resolution x-ray diffractometer to produce reciprocal space maps. Films with compositions of approximately Si0.77Ge0.20C0.01 vvith thicknesses ranging from 120 nm to 750 nm were found to be pseudomorphic with a tetragonal distortion, εT, near 1%. The tetragonal distortion in pseudomorphic samples with compositions near Si0.47Ge0.50C0.03 with thicknesses ranging from 61 nm to 115 nm was found to be near 2%. The strain increased linearly with Ge concentration even though the Ge:C ratio remained nearly constant. The strain in samples with similar compositions was not a function of thickness. These strain measurements correlated well with results from ion channeling analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 461
Copyright
Copyright © Materials Research Society 1996

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References

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