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X-Ray Diffraction Analysis Of Strain And Mosaic Structure In (001) Oriented Homoepitaxial Diamond Films

Published online by Cambridge University Press:  15 February 2011

W. Brock Alexander ,
Pehr E. Pehrsson ,
David Black  and
James E. Butler
W. Brock Alexander
Affiliation:
ASEE/NRL Postdoctoral Research Fellow, Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
Pehr E. Pehrsson
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
David Black
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899.
James E. Butler
Affiliation:
Chemistry Division, Naval Research Laboratory, Washington, DC 20375.
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Abstract

Homoepitaxial diamond films were grown on (001) oriented high pressure, high temperature type lb diamond by microwave plasma-assisted chemical vapor deposition to thicknesses of 27–48 μm. Substrates were polished off-axis 5.5° ±0.5° in the [100] direction prior to film deposition. Some of the diamond films developed tensile stress sufficiently large to result in cracking on { 111 } cleavage planes, while other films exhibited compressive stress. The strain and mosaic structure were measured with seven crystal x-ray diffraction. This characterization tool allowed the separation of misorientation effects from those of lattice parameter variation. Films exhibited smaller (˜88 ppm) and larger (˜27 ppm) perpendicular lattice parameters relative to the HPHT substrates. A cross-sectional approach for probing strain in diamond films with micro-Raman analysis was used to show stress distributions (˜100–300 MPa) through the thickness of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 305
Copyright
Copyright © Materials Research Society 1996

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