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X-ray Characterization of PbTe/SnTe Superlattices

Published online by Cambridge University Press:  10 February 2011

S. O. Ferreira ,
E. Abramof ,
P. H. O. Rappl ,
A. Y. Ueta ,
H. Closs ,
C. Boschetti ,
P. Motisuke  and
I. N. Bandeira
S. O. Ferreira
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
E. Abramof
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
P. H. O. Rappl
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
A. Y. Ueta
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
H. Closs
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
C. Boschetti
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
P. Motisuke
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
I. N. Bandeira
Affiliation:
Instituto Nacional de Pesquisas Espaciais INPE-LAS CP: 515 CEP: 12201-970 Sdo José dos Campos, [email protected]
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Abstract

PbTe/SnTe superlattices have been proposed many years ago for use as base material for infrared detectors. However, many difficulties have prevented its use, mainly the ones related to obtaining low concentration SnTe. Recently we have shown that SnTe layers with relatively low hole concentration can be grown by molecular beam epitaxy at low temperature using stoichiometric charges. In this work we investigate the structural properties of PbTe/SnTe superlattices grown by molecular beam epitaxy on (111) BaF2 substrates. Sample characterization has been done by high resolution x-ray diffraction. Information on strain was obtained from reciprocal space maps of asymmetric Bragg reflections and used as input parameters for dynamical simulation of the diffraction spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 389
Copyright
Copyright © Materials Research Society 1998

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