Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-29T07:25:08.017Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray and Raman Studies of MeV Ion Implanted GaInAs/GaAs

Published online by Cambridge University Press:  26 February 2011

C. R. Wie ,
K. Xie ,
G. Burns ,
F. H. Dacol ,
D. Pettit  and
J. M. Woodall
C. R. Wie
Affiliation:
Electrical and Computer Eng., SUNY-Buffalo, Amherst, NY 14260
K. Xie
Affiliation:
Electrical and Computer Eng., SUNY-Buffalo, Amherst, NY 14260
G. Burns
Affiliation:
I.B.M., T.J. Watson Research Center, Yorktown Heights, NY 10598
F. H. Dacol
Affiliation:
I.B.M., T.J. Watson Research Center, Yorktown Heights, NY 10598
D. Pettit
Affiliation:
I.B.M., T.J. Watson Research Center, Yorktown Heights, NY 10598
J. M. Woodall
Affiliation:
I.B.M., T.J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

The elastic strain in 2 MeV He ion-bombarded pseudomorphic or lattice-relaxd GaInAs is found to vary by 13% over tlhe beam dose range, 5x1012 - 5×1015 cm-2, with a minimum at 5×1013 cm-2. The data suggest a beam-induced annealing effect at lower doses and the build-up of radiation damage at higher doses, which are also indicated by the phonon line shift data. The phonon shift and the elastic strain in lattice-relaxed GaInAs, bombarded with 15 MeV Cl ions, are approximately the same as in an ion-bombarded bulk GaAs. The lattice mismatch in parallel constant decreases for a sample with a lower misfit and increases for a sample with higher misfit with increasing beam dose. The phonon shift in a pseudomorphic GaInAs bombarded with 15 MeV Cl ions is smaller than in the relaxed samples by a factor of two.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 499
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Cole, J.M., Earwaker, L.G., Cullis, A.G., Chew, N.G., Bass, S.J. and Taylor, L.L., Nucl. Instr. Meth. B24/25, 594 (1987)Google Scholar
2.Dietrich, H.B., SPIE Proc. 530, 30 (1985)Google Scholar
3.Wie, C.R., Tombrello, T.A., and Vreeland, T. Jr, Phys. Rev. B 33, 4083 (1986)Google Scholar
4.Burns, G., Dacol, F.H., Wie, C.R., Burstein, E., and Cardona, M., Solid. State Commun. 62, 449 (1987)Google Scholar
5.Bardin, T.T., Pronko, J.G., Junga, F.A., Opyd, W.G., Mardingly, A.J., Xiong, F. and Tombrello, T.A., Nucl. Instr. Meth. B 24/125, 548 (1987)Google Scholar
6.Burns, G., Wie, C.R., Dacol, F.H., Pettit, G.D., and Woodall, J.M., Appl. Phys. Lett. 51, 1919 (1987); this Fall MRS Meeting (1987).Google Scholar
7.Wie, C.R., Tombrello, T.A., and Vreeland, T. Jr, J. Appl. Phys. 59, 3743 (1986)Google Scholar
8.Cerdeira, F., Buchenauer, C.J., Pollak, F.H., and Cardona, M., Phys. Rev. B 5, 580 (1972)Google Scholar
9.Richter, H., Wang, Z.P., and Ley, L., Solid State Commun. 39, 625 (1981).Google Scholar