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XPS-Analysis of Ion-Beam-Induced Oxidation (IBO) of AlxGa1−xAs Substrates

Published online by Cambridge University Press:  25 February 2011

Josep-Lluis Alay  and
Wilfried Vandervorst
Josep-Lluis Alay
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. LCMM, Departament de Física Aplicada i Electrónica, Universitat de Barcelona, 08028 Barcelona, Spain.
Wilfried Vandervorst
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
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Abstract

XPS analysis was used to characterise GaAs, Al0.4Ga0.6As and Al0.8Ga0.2As targets bombarded with an O2+ beam ranging from 1 keV to 5 keV. The bombardments were carried out at different angles of incidence from 0° to 60°. In all cases a strong preferential sputtering of arsenic gives rise to an As-depleted altered layer, formed by a mixture of gallium, arsenic and aluminium oxides with metallic gallium and arsenic. Aluminium and gallium are preferentially oxidized, a fact that correlates with the corresponding heat of formation of the oxides, whereas the arsenic oxidation requires a minimum incorporation of oxygen into the matrix. For all experimental conditions a considerably lower oxidation level has been observed in every case as compared to the IBO of silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 619
Copyright
Copyright © Materials Research Society 1993

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