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Xps Analysis of the Sapphire Surface as a Function of High Temperature Vacuum Annealing

Published online by Cambridge University Press:  25 February 2011

E.D. Richmond
E.D. Richmond*
Affiliation:
Naval Research Laboratory, Code 6816, Washington D.C. 20375-5000
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Abstract

For the first time the (1102) surface of sapphire has been investigated by X-ray photoelectron spectroscopy to ascertain chemical changes resulting from annealing in vacuum at 1300° C and 1450° C. As received substrates had a substantial surface C contaminant. For substrates that were chemically cleaned before inserting them into the MBE system no trace of carbon is detected. A residual flourine contaminant results from the cleaning procedure and is desorbed by the vacuum annealing. Spectra of annealed substrates are compared to the unannealed chemically cleaned substrates. The annealed substrates exhibit 0.4 to 0.5 eV shift to higher binding energy of the Al peak and a 0.3 eV shift to higher binding energy of the O peak. In addition, a 2% depletion of oxygen from the surface occurs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 253
Copyright
Copyright © Materials Research Society 1990

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References

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