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Xafs Study on Interfaces in III-V Semiconductor Heterostructures

Published online by Cambridge University Press:  25 February 2011

Kiyoshi Ogata ,
Kazufumisuenaga ,
Asao Nakano  and
Teruo Mozume
Kiyoshi Ogata
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama 244, Japan.
Kazufumisuenaga
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama 244, Japan.
Asao Nakano
Affiliation:
Production Engineering Research Laboratory, Hitachi, Ltd., Yokohama 244, Japan.
Teruo Mozume
Affiliation:
Central Research Laboratory, Hitachi, Ltd., Tokyo 185, Japan.
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Abstract

Interfaces in InGaAs/InP heterostructures were investigated by XAFS analysis using synchrotron radiation. Two types of InGaAs/InP heterostructures were made by MEE using Ga, In, AsH3 and PH3 as sources. These InGaAs layers were terminated by (a) InGa and (b) As. The local structures around P were investigated by fluorescent XAFS analysis. It shows that the nearest neighbor around P is Ga and In in the InGa (a) sample and mainly In in the As (b) sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 109
Copyright
Copyright © Materials Research Society 1993

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References

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