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Xafs as a Direct Local Structural Probe in Revealing the Effects of C Presence in B Diffusion in Sige Layers

Published online by Cambridge University Press:  17 March 2011

M. Alper Sahiner ,
Parviz Ansari ,
Malcolm S. Carroll ,
Charles W. Magee ,
Steven W. Novak  and
Joseph C. Woicik
M. Alper Sahiner
Affiliation:
Seton Hall University, Physics Department, South Orange, New Jersey 07079
Parviz Ansari
Affiliation:
Seton Hall University, Physics Department, South Orange, New Jersey 07079
Malcolm S. Carroll
Affiliation:
Sandia National Laboratories, Albuquerque, New Mexico 87185
Charles W. Magee
Affiliation:
Evans East, East Windsor, New Jersey 08520
Steven W. Novak
Affiliation:
Evans East, East Windsor, New Jersey 08520
Joseph C. Woicik
Affiliation:
National Institute of Standards and Technology, Gaithersburg, Maryland 20899
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Abstract

The local structural information around the germanium atom in boron doped SiGe alloys is important in understanding the dopant diffusion mechanisms. Epitaxial SiGe test structures with B and C markers were grown on Si substrates by using rapid thermal chemical vapor deposition (RTCVD). The local structure around the Ge atom was probed using Ge K-edge x-ray absorption fine structure spectroscopy (XAFS) to determine the effects of the B and C on the Ge sites. The concentration profiles obtained from secondary ion mass spectroscopy are correlated with the Ge XAFS results. The modifications on the local structure around the Ge atoms are revealed from the multiple scattering analyses on the Ge near-neighbors. First and second shell XAFS fits to the B doped SiGe samples indicate a direct evidence of the Ge trapping of the B atoms whereas the C is randomly distributed to the Si lattice sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C11.10
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraiz, M., Poate, J. M., Luftmann, H. S., and Haynes, T. E., J. Appl. Phys. 81, 6031 (1997).Google Scholar
2. Carroll, M. S., Chang, C-L, Sturm, J. C., and Buyuklimanli, T., Appl. Phys. Lett. 73, 3695 (1998).Google Scholar
3. Carroll, M. S., Sturm, J. C., Napolitani, E., Salvador, D. De, Berti, M., Stangle, J., Bauer, G., and Tweet, D. J., Phys. Rev. B 64, 073308–1 (2001).Google Scholar
4. Scholz, R., Goesele, U., Huh, J. Y., and Tan, T. Y., Appl. Phys. Lett. 72, 200 (1998).Google Scholar
5. Sahiner, M. A., Novak, S. W., Woicik, J., Liu, J., Krishnamoorthy, V., IEEE Ion Implantation Technology-2000, Vol 00EX432, 600 (2000).Google Scholar
6. Sahiner, M. A., Novak, S. W., Woicik, J. C., Liu, J., and Krishnamoorty, V., MRS Proceedings, 669, J5.8.1 (2001).Google Scholar
7. Sahiner, M. A., Novak, S. W., Woicik, J. C., Takamura, Y., Griffin, P. B., Plummer, J. D., MRS Proceedings 717, C3.6.1 (2002)Google Scholar
8. Allain, J. L., Bourret, A., Regnard, J. R., and Armigliato, A., Appl. Phys. Lett. 61, 264 (1992)Google Scholar
9. Armigliato, A., Romanato, F., Drigo, A., Carnera, A., Brizard, C., Regnard, J. R., and Allain, J.L., Phys. Rev. B 52, 1859 (1995).Google Scholar
10. Woicik, J. C., Bouldin, C. E., Miyano, K. E., and King, C. A., Phys. Rev. B 55, 15386 (1997).Google Scholar
11. Aubry, J. C., Tyliszcak, T., Hitchcock, A. P., Baribeau, J. M., and Jackman, T. E., Phys. Rev. B 59, 12872 (1999).Google Scholar
12. Woicik, J. C., Pellegrino, J. G., Steiner, B., Miyano, K. E., Bonpadre, S. B., Sorensen, L. B., Lee, T.-L., and Khalid, S., Phys. Rev. Lett. 79, 5027 (1997).Google Scholar
13. Romanato, F., Salvador, D. De., Berti, M., Drigo, A., Tormen, M., Rossetto, G., Pascarelli, S., Boscherini, F., Lamberti, C., and Mobilio, S., Phys. Rev. B 57, 14620 (1998).Google Scholar
14. Zabinsky, S. I., Ankudinov, A., Rehr, J. J., and Albers, R. C., Phys. Rev. B 52, 2995 (1995).Google Scholar
15. Salvador, D. De, Tormen, M., Berti, M., Drigo, A. V., Romanato, F., Boscherini, F., Stangl, J., Zerlauth, S., Bauer, G., Colombo, L., and Mobilio, S., Phys. Rev. B 63, 045314 (2001).Google Scholar
16. Carroll, M. S., Chang, C.-L., Sturm, J. C., and Buyuklimanli, T., Appl. Phys. Lett. 73, 3695 (1998).Google Scholar
17. Newville, M., Livins, P., Yacoby, Y., Rehr, J. J., and Stern, E. A., Phys. Rev. B 47, 14126 (1993).Google Scholar