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Write-Erase Mechanism of Indium-Antimony Optical Disk Medium

Published online by Cambridge University Press:  28 February 2011

Y. Goto ,
K. Utsumi ,
A. Ushioda ,
I. Tsugawa  and
N. Koshino
Y. Goto
Affiliation:
Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi, 243-01, Japan.
K. Utsumi
Affiliation:
Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi, 243-01, Japan.
A. Ushioda
Affiliation:
Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi, 243-01, Japan.
I. Tsugawa
Affiliation:
Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi, 243-01, Japan.
N. Koshino
Affiliation:
Fujitsu Laboratories Ltd., 10-1, Morinosato-Wakamiya, Atsugi, 243-01, Japan.
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Abstract

Written and erased bits of the In-Sb phase change type optical disk medium were studied using transmission electron microscopy (TEN) and electron probe microanalysis (EPMA). Both the bits were separated into inner and outer areas and were composed of only rhombohedral Sb crystals and zinc blende In50Sb50 crystals. The difference between the two bits were in crystal size and atomic distribution of the inner area. Models of the writing and erasing processes were derived from these observations and the In-Sb phase diagram. With these models, the thicknesses, grain sizes and optical contrasts of the both bits were consistently explained.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 251
Copyright
Copyright © Materials Research Society 1987

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References

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