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Wide Bandgap Semiconductors for Cold Cathodes: A Theoretical Analysis

Published online by Cambridge University Press:  10 February 2011

Peter Lerner
Affiliation:
Penn State University, Department of Physics, University Park, PA 16802
P. H. Cutler
Affiliation:
Penn State University, Department of Physics, University Park, PA 16802
N. M. Miskovsky
Affiliation:
Penn State University, Department of Physics, University Park, PA 16802
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Abstract

In this paper we describe the field emission from wide band-gap semiconductor thin film electron sources as a three-step process. Internal field emission is the mechanism for electron injection at the metal-semiconductor cathode interface. Under an internal field, electrons injected into the conduction band can propagate quasi-ballistically through the thin semiconductor film. At the vacuum interface, they are field emitted across a PEA or NEA surface. Consistent with the electron injection mechanism we have done molecular dynamics simulations for GaN films with an initial energy distribution corresponding to a Fowler-Nordheim (FN) spectrum. Results demonstrate quasi-ballistic propagation and approximate preservation of the FN energy distribution. Furthermore, high levels of n-doping in GaN (∼ 1017cm−3) do not inhibit transport in thin films (<0.1 μm).

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Pryor, R. W., Mat. Res. Soc. Proc, 416, 425 (1996).Google Scholar
[2] Zhimov, V. V., Wojak, G. J., Choi, W. B., Cuomo, J. J., Hren, J. J., NCSU preprint (1996).Google Scholar
[3] Endo, M., Nakane, H., Adachi, H., J. Vac. Sci. Technol. B14, 2114 (1996).Google Scholar
[4] Popovici, G., Prelas, M. A., in: Prelas, M. A., Gielisse, P., Popovici, G., Spitsyn, B. V., Stacy, T. (eds.) Wide band gap electronic materials, (Kluwer, Dordrecht, 1995), p.l.Google Scholar
[5] Geis, M. W., Twichell, J. W., and Lyszczarz, T. M., J. Vac. Sci. Technol. B 14, 2060 (1996).Google Scholar
[6] Lerner, P., Cutler, P. H., and Miskovsky, N.M., submitted to JVST B (Nov. 1996)Google Scholar
[7] Sze, S. M., Physics of Semiconductor Electronic Devices, (John Wiley and Sons, New York, 1981).Google Scholar
[8] Okano, K., Koizumi, S., Ravi, S., Silva, P. and Amaratunga, G.A., Nature 381, 140(1996).Google Scholar
[9] Lerner, P., Cutler, P. H. and Miskovsky, N. M., Journ. de Physique (in press).Google Scholar
[10] Cutler, P. H., Huang, Z.-H., Miskovsky, N. M., Ambrosio, P. D’ and Chung, M., J. Vac. Sci. Technol. B14, 2020(1996).Google Scholar
[11] Modinos, A., Field, Thermionic and Secondary Electron Emission Spectroscopy, (Plenum, New York, 1983).Google Scholar
[12] Fitting, H. J. and Van Czarnovski, A., Phys. Stat. Sol. A 93, 385(1986).Google Scholar