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Why abrasive free Cu slurry is promising?

Published online by Cambridge University Press:  18 March 2011

Yasuo Kamigata ,
Yasushi Kurata ,
Katsuyuki Masuda ,
Jin Amanokura ,
Masato Yoshida  and
Masanobu Hanazono
Yasuo Kamigata
Affiliation:
Hitachi Chemical Co., Ltd., Research and Development Center, Tsukuba, Japan
Yasushi Kurata
Affiliation:
Hitachi Chemical Co., Ltd., Research and Development Center, Tsukuba, Japan
Katsuyuki Masuda
Affiliation:
Hitachi Chemical Co., Ltd., Research and Development Center, Tsukuba, Japan
Jin Amanokura
Affiliation:
Hitachi Chemical Co., Ltd., Research and Development Center, Tsukuba, Japan
Masato Yoshida
Affiliation:
Hitachi Chemical Co., Ltd., Research and Development Center, Tsukuba, Japan
Masanobu Hanazono
Affiliation:
Hitachi Chemical Co., Ltd., Electronic Materials Operations Div., Tokyo, Japan
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Abstract

To develop high signal speed semiconductor LSIs, Cu interconnection is one of the most important requirements. In the fabrication of Cu interconnections using CMP method, minimized dishing, erosion and reduction in micro-scratches are large issues to be realized. We performed a research for superior properties of Cu CMP. Finally, we succeeded in developing Abrasive Free (AF) Cu slurry suitable for these requirements.

We also developed slurry for barrier (TaN) with a high selectivity between TaN and SiO2 of 50 to reduce oxide (SiO2) loss. This reduced oxide loss is directly related to obtaining a controlled circuit resistivity.

By applying these two kinds of slurries, ULSIs with multilevel Cu interconnects and excellent reliabilities were obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M1.3
Copyright
Copyright © Materials Research Society 2001

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References

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