Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T10:42:56.570Z Has data issue: false hasContentIssue false
  • English
  • Français

Whole-Wafer Optical Mapping of Defects in Insulating Silicon Carbide Wafers

Published online by Cambridge University Press:  11 February 2011

Millard G. Mier ,
John J. Boeckl ,
David A. Hill ,
Scott D. Bertrand ,
Easwar Ramakrishnan ,
Matthew D. Roth ,
Cengiz Balkas  and
Matthew P. Nelson
Millard G. Mier
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson, AFB OH
John J. Boeckl
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson, AFB OH
David A. Hill
Affiliation:
Wyle Laboratory, Dayton OH
Scott D. Bertrand
Affiliation:
OriginLab Inc., Northampton MA
Easwar Ramakrishnan
Affiliation:
OriginLab Inc., Northampton MA
Matthew D. Roth
Affiliation:
Sterling Semiconductor Inc., Sterling VA Now at the Applied Physics Laboratory of Pennsylvania State University, Kittanning PA
Cengiz Balkas
Affiliation:
Sterling Semiconductor Inc., Sterling VA Now at Yenitech Inc., Reston VA
Matthew P. Nelson
Affiliation:
ChemIcon Inc., Pittsburgh PA
Get access

Abstract

Plotting defect locations in insulating SiC presents a challenge because the total number of locations on a wafer is so large. We scan the wafer with visible light at an appropriate resolution and sort out transmissions appropriate for the defects we are looking for. Under these conditions, we find that voids and micropipes reduce the pixel transmission to 0.3 to 0.5. Sorting for this transmission reduces the number of pixels of interest to a manageable number, especially with recent progress in growing lower defect SiC. Now a commercial plotting program can easily display defect locations within a circle representing the wafer boundary. We verify the defect locations by scanning electron microscope secondary electron images and scanning optical microscope visible-light images at several resolutions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.16
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Streit, S. and Morkoç, H., J. Vac. Sci. Technol. B10, 1237 (1992)Google Scholar
2. Schwierz, F. and Liou, J. J., Microelectronics Reliability 41, 145 (2001)Google Scholar
3. Vathulya, V. R. and White, M. H., IEEE Trans. Electr. Dev. ED47, 2018 (2000)Google Scholar
4. Sheppard, S. T., Doverspike, K., Pribble, W. L., Allen, S. T., Palmour, J. W., Kehias, L. T., and Jenkins, T. J., IEEE Electron Dev. Lett. EDL20, 163 (1999)Google Scholar
5. Müller, St. G., Glass, R. C., Hobgood, H. M., Tsvetkov, V. F., Brady, M., Henshall, D., Malta, D., Singh, R., Palmour, J., and Carter, C. H. Jr, Mat. Sci and Engr. B80, 327 (2001)Google Scholar
6. Hofmann, D., Bickermann, M., Eckstein, R., Kölbl, M., Muller, St. G., Schmitt, E., Weber, A., and Winnacker, A., J. Cryst. Growth 198/199, 1005 (1999)Google Scholar
7. Yakimova, R. and Janzén, E., Diamond and Related Materials 9, 432 (2000)Google Scholar
8. Cherednichenko, D. I., Khlebnikov, Y. I., Khlebnikov, I.I., Drachev, R. V., and Sudarshan, T. S., J. Appl. Phys. 89, 4139 (2001)Google Scholar
9. Yakimova, R., Yakimov, T., Hitova, L., and Janzén, E., Mat. Sci. and Engr. B46, 287 (1997)Google Scholar
10. Choyke, W. J. and Devaty, R. P., Diamond and Related Materials 6, 1243 (1997)Google Scholar
11. Mier, M., Boeckl, J., Balkas, C., and Nelson, M., presented at the 4th European Conference on Silicon Carbide and Related Materials Sept. 2002 and to be published in the Proceedings.Google Scholar
12. We use a 1.67 GHz Athlon-based PC with 1.5 Gbytes of RAM and a 60 Gbyte hard driveGoogle Scholar
13. GE Force 2, Visiontek Inc.Google Scholar
14. Origin 3, 4, 5, and 6, OriginLab Inc., Northampton MAGoogle Scholar
15. Origin 7, OriginLab Inc., Northampton MAGoogle Scholar