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Wet Etching Methods for Perovskite Substrates

Published online by Cambridge University Press:  15 March 2011

Victor Leca ,
Guus Rijnders ,
Gertjan Koster ,
Dave H. A. Blank  and
Horst Rogalla
Victor Leca
Affiliation:
University of Twente, Dept. of Applied Physics, Low Temperature Division, Enschede, The Netherlands
Guus Rijnders
Affiliation:
University of Twente, Dept. of Applied Physics, Low Temperature Division, Enschede, The Netherlands
Gertjan Koster
Affiliation:
University of Twente, Dept. of Applied Physics, Low Temperature Division, Enschede, The Netherlands
Dave H. A. Blank
Affiliation:
University of Twente, Dept. of Applied Physics, Low Temperature Division, Enschede, The Netherlands
Horst Rogalla
Affiliation:
University of Twente, Dept. of Applied Physics, Low Temperature Division, Enschede, The Netherlands
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Abstract

In oxide electronics substrates with atomically flat terraces are a request for growing high-quality epitaxial thin films. In this paper results on chemical etching of some substrates with perovskite, ABO3, structure (e.g., SrTiO3, LSAT - the (LaAlO3)0.3(Sr2AlTaO6)0.35 solid solution, and NdGaO3) are presented. In order to obtain high quality substrates, different etchants (NH4F + HF, HCl + NH4Cl, and HCl + HNO3) with various pH values have been studied. From Atomic Force Microscopy (AFM), in air, we conclude that, irrespective of the etchant that has been used, a substrate surface with a BOx terminated layer and atomically flat terraces without etch pits could be obtained. The pH-value and temperature of the etchant and the etching time, however, influence significantly the surface quality. Reflection high energy electron diffraction (RHEED) patterns confirmed the AFM results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O3.6
Copyright
Copyright © Materials Research Society 2000

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