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Wet Chemical Etching of Zn-containing oxides and HfO2 for the fabrication of Transparent TFTs

Published online by Cambridge University Press:  31 January 2011

Jae-Kwan Kim ,
Jun Young Kim ,
Seung-Cheol Han ,
Joon Seop Kwak  and
Ji-Myon Lee
Jae-Kwan Kim
Affiliation:
[email protected], Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Jun Young Kim
Affiliation:
[email protected], Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Seung-Cheol Han
Affiliation:
[email protected], Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Joon Seop Kwak
Affiliation:
[email protected], Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Chonnam, Korea, Republic of
Ji-Myon Lee
Affiliation:
[email protected], Sunchon National University, Materials Science and Metallurgical Engineering, Sunchon, Korea, Republic of
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Abstract

The etch rate and surface morphology of Zn-containing oxide and HfO2 films after wet chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO2 films by BF acid proceeded through lateral widening and merging of the initial irregular pits.

Keywords

II-VIoxidedielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H10-25
Copyright
Copyright © Materials Research Society 2010

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References

1 Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M. and Hosono, H., Nature. 432, 288 (2004).10.1038/nature03090Google Scholar
2 Kim, M., Jeong, J. H., Lee, H. J., Ahn, T. K., Shin, H. S., Park, J. S., Jeong, J. K., Mo, Y. G., and Kim, H. D., Appl. Phys. Lett. 90, 212114 (2007).10.1063/1.2742790Google Scholar
3 Park, J. S., Jeong, J. K., Mo, Y. G., and Kim, H. D., Appl. Phys. Lett. 90, 262106 (2007).10.1063/1.2753107Google Scholar
4 Jeon, H., Noh, K., Kim, D.-H., Jeon, M., Verma, V. P., Choi, W., Kim, D. and Moon, J., J. Korean Phys. Soc. 51, 1999 (2007).10.3938/jkps.51.1999Google Scholar
5 Park, J. M., Hong, J. S., Yang, J. Y., Kim, J. J., Park, S. H., Kim, H. M. and Ahn, J.-S., J. Korean Phys. Soc. 48, 1530 (2006).Google Scholar
6 Nomura, K., Takagi, A., Kamiya, T., Ohta, H., Hirano, M. and Hosono, H., Jpn. Appl. Phys. 45, 4303 (2006).10.1143/JJAP.45.4303Google Scholar
7 Wilk, G. D., Wallace, R. M., and Anthony, J. M., J. Appl. Phys., 89, 5243 (2001).10.1063/1.1361065Google Scholar
8 Lee, S. J., Luan, H. F., Bai, W. P., Lee, C. H., Jeon, T. S., Senzaki, Y., Roberts, D., and Kwong, D. L., Tech. Dig. Int. Electron Devices Meet. 31 (2000).Google Scholar
9 Lee, J. M., Kim, K. K., Hyun, C. K., Tampo, H., and Niki, S., J. Nanosci. and Nanotechnol. 6, 1 (2006).10.1166/jnn.2006.001aGoogle Scholar
10 Jo, Y. J., Kim, J. K., Han, S. C., Kwak, J. S., and Lee, J. M., J. Kor. Inst. Met. & Mater. 47, 44 (2009).Google Scholar
11 Gonçalves, G., Barquinha, P., Raniero, L., Martins, R., and Fortunato, E., Thin Solid Films. 516, 1374 (2008).10.1016/j.tsf.2007.03.087Google Scholar
12 Tsai, T.H. and Wu, Y. F., Microelectron. Eng. 83, 536 (2006).10.1016/j.mee.2005.12.003Google Scholar
13 Pearton, S. J., Chen, J. J., Lim, W. T., Ren, F., and Norton, D. P., ECS trans. 6, 501 (2007).10.1149/1.2731219Google Scholar