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Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

K. C. Zeng ,
M. Smith ,
J. Y. Lin ,
H. X. Jiang ,
H. Tang ,
A. Salvador ,
W. Kim ,
H. Morkoc  and
M. Asif Khan
K. C. Zeng
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
M. Smith
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS, 66506–2601
H. Tang
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
A. Salvador
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
W. Kim
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
H. Morkoc
Affiliation:
Materials Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
M. Asif Khan
Affiliation:
Department of Electrical and Computing Engineering, University of South Carolina, Columbia, SC 29208.
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Abstract

Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ∼ 0.07) and InxGa1-xN/GaN (x ∼ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 643
Copyright
Copyright © Materials Research Society 1998

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References

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