Thickness profile of aluminum thin films deposited from dimethylaluminum hydride on silicon substrate changed with wavelengths of light chosen from the wide emission spectra of a deuterium lamp. Under illumination of the VUV around 160 nm deposits were formed preferentially in illuminated regions, while such area selectivity was lost and uniformly thick films were deposited all over the substrate when the UV around 240 nm was used. The observed area selectivity can be interpreted as arising from a wavelength-dependent nucleation mechanism; namely, surface photochemical reactions leading to nucleation are induced only by the VUV, while the UV photons are capable of producing photofragments in gas phase responsible for nucleation.