Hostname: page-component-848d4c4894-pjpqr Total loading time: 0 Render date: 2024-07-04T19:26:16.186Z Has data issue: false hasContentIssue false
  • English
  • Français

Waveguides Fabricated in Fused Silica by Germanium Ion Implantation at Varying Doses

Published online by Cambridge University Press:  21 February 2011

Patrick W. Leech  and
Mark C. Ridgway
Patrick W. Leech
Affiliation:
Telstra Research Laboratories, Clayton, 3168, Victoria Australia.
Mark C. Ridgway
Affiliation:
Australian National University, Canberra, 0200, ACT, Australia.
Get access

Abstract

The implantation of MeV Ge3+ ions into fused silica has been used to fabricate single mode channel waveguides with a low propagation loss of 0.10–0.15 dB/cm. The loss coefficient, α, has been measured as a function of ion dose (8 × 1013 to 8 × 1016 ions/cm2) and annealing temperature (250 to 600 °C) at λ = 1300 nm. The value of cc for the as-implanted waveguides exhibited a minimum of -1.0 dB/cm at an intermediate range of dose from 8 × 1014 to 8 × 1015 ions/cm2. A progressive reduction in α occurred as the annealing temperature was increased from 300 to 500 °C. Annealing of the implanted waveguides at 500 °C for 1 h has produced an order of magnitude decrease in α to 0.1 dB/cm at 8 × 1014 ions/cm2. At doses which were outside of the intermediate range, the value of α was ≥ 10 dB/cm. This trend in α with ion dose has been attributed to the dominance of a residual nuclear component of damage after annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 392: Symposium U – Thin Films for Integrated Optics Applications , 1995 , 255
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Townsend, P.D., Chandler, P.J. and Zhang, L., Optical Effects of Ion Implantation, Cambridge University Press, Cambridge, p.52, (1994).Google Scholar
2. Chandler, P.J., Zhang, L. and Townsend, P.D., Solid State Phenomena, 27, 129, (1992).Google Scholar
3. Naik, I.K., Appl.Phys.Lett., 43 (6), 519, (1983).Google Scholar
4. Wong, S.P., Pun, E.Y., Lam, W.T. and Chung, P.S., Proc. Mat.Res.Soc., 244, 375, (1992).10.1557/PROC-244-375Google Scholar
5. Faik, A.B., Chandler, P.J., Townsend, P.D., Radiation Effects, 98 (24), 223., (1986)Google Scholar
6. Heidemann, K.F., Radiation Effects, 61, 235, (1982).Google Scholar
7. Albert, J., Hill, K.O., Malo, B., Johnson, D.C., Brebner, J.L., Trudeau, Y.B. and Kajrys, G., Appl.Phys.Lett, 60 (2), 148, (1992).Google Scholar
8. Albert, J., Malo, B., Hill, K.O., Johnson, D.C., Brebner, J.L. and Leonelli, R., Optics Letters, 17, (23), 1652, (1992).Google Scholar
9. Leech, P.W., Faith, M., Kemeny, P.C., Ridgway, M.C. and Elliman, R.G., Reeves, G.K. and Zhou, W., Nuclear Instruments and Methods in Physics Research, In Press, (1995).Google Scholar
10. Webb, A.P., Houghton, A.J. and Townsend, P.D., Radiation Effects, 30, 177, (1976).10.1080/00337577608233060Google Scholar
11. Strohkendl, F.P., Gunter, P., Buchal, Ch. and Irmscher, R., J.Appl.Phys., 69(1), 84, (1991).10.1063/1.347661Google Scholar
12. Verhaegen, M., Allard, L.B., Brebner, J.L., Essid, M., Roorda, S. and Albert, J., Proc. 9th ICIBMM, Feb. 1995, Canberra.Google Scholar