Hostname: page-component-745bb68f8f-s22k5 Total loading time: 0 Render date: 2025-02-05T14:22:32.632Z Has data issue: false hasContentIssue false
  • English
  • Français

Wafer-Scale Laser Pantography: IV. Physics of Direct Laser-Writing Micron-Dimension Transistors

Published online by Cambridge University Press:  21 February 2011

Irving P. Herman ,
Bruce M. Mcwilliams ,
Fred Mitlitsky ,
Hon Wah Chin ,
Roderick A. Hyde  and
Lowell L. Wood
Irving P. Herman
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94550, USA
Bruce M. Mcwilliams
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94550, USA
Fred Mitlitsky
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94550, USA
Hon Wah Chin
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94550, USA
Roderick A. Hyde
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94550, USA
Lowell L. Wood
Affiliation:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, CA 94550, USA
Get access

Abstract

The processes involved in the fabrication of micron-dimension transistors and small-scale integrated circuits using only the technique of direct laser-writing by localized pyrolytic surface reactions are discussed. New experimental findings in the deposition of tungsten by silicon. surface reduction of tungsten hexafluoride and doped polysilicon are presented. The techniques used to fabricate laser beam-written n-MOSFET's are being extended to make unipolar JFET's and bipolar lateral pnp transistors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 29
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. McWilliams, B. M., Herman, I. P., Mitlitsky, F., Hyde, R. A., and Wood, L. L., Appl. Phys. Lett., 43, 946 (1983).CrossRefGoogle Scholar
2. Chin, H. W., McWilliams, B. M., Mitlitsky, F., Whitehead, J. C., and Wood, L. L., Wafer-Scale Laser Pantography V: Hour-Scale Start-to-Finish Interconnection of VLSI CMOS Gate Arrays, UCRL-89639 (1983). (To appear in summary in Proc. USDoE 1983 CAD Conference Livermore CA October 1983.)Google Scholar
3. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., Appl. Phys. Lett., 38, 1018 (1981).Google Scholar
4. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., Appl. Phys. Lett., 39, 957 (1981).CrossRefGoogle Scholar
5. Bäuerle, D., Irsigler, P., Leyendecker, G., Noll, H., and Wagner, D., Appl. Phys. Lett., 40, 819 (1982).CrossRefGoogle Scholar
6. Allen, S. D. and Tringubo, A. B., J. Appl. Phys., 54, 1641 (1983).Google Scholar
7. Herman, I. P., Hyde, R. A., McWilliams, B. M., Weisberg, A. H., and Wood, L. L., Materials Research Society Symposia Proceedings (November 1982), 17, Laser Diagnostics and Photochemical Procesing for Semiconductor Devices, edited by Osgood, R. M. Jr, Brueck, S.R.J., and Schlossberg, H. R., (Elsevier, New York, 1983), p. 9.Google Scholar
8. Kräuter, W., Bäuerle, D., and Fimberger, F., Appl. Phys., A 31, 13 (1983).CrossRefGoogle Scholar
9. Ehrlich, D. J., Osgood, R. M. Jr., and Deutsch, T. F., IEEE J. Quantum Electron., QE-16, 1233 (1980).CrossRefGoogle Scholar
10. Shah, P. L., IEEE Trans. Electron. Devices, ED-26, 631 (1979).CrossRefGoogle Scholar
11. Muraka, S. P., Silicides for VLSI Applications, (Academic Press, New York, 1983), p. 2.Google Scholar
12. Moriya, T., Yamada, K., Shibata, T., lizuka, H. and Kashiwagi, M., Proceedings of the Symposium on VLSI Technology, Hawaii, Sept. 12–14, 1983, Presentation 7–6 (IEEE, 1983).Google Scholar
13. Shaw, J. M. and Amick, J. A., RCA Rev., 306 (1970).Google Scholar
14. Sze, S. M., Physics of Semiconductor Devices, 2nd Edition (J. Wiley, New York, 1981), p. 32.Google Scholar
15. Yang, J. J., Simpson, W. I., and Ruth, R. P., J. Electron. Mater., 10, 1011 (1981).Google Scholar
16. Fripp, A. L. and Slack, L. H., J. Electrochem. Soc., 120, 145 (1973).CrossRefGoogle Scholar