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Wafer Level Micropackaging of MEMS Devices Using Thin Film Anodic Bonding

Published online by Cambridge University Press:  01 February 2011

Lauren E. S. Rohwer ,
Andrew D. Oliver  and
Melissa V. Collins
Lauren E. S. Rohwer
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, U.S.A.
Andrew D. Oliver
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, U.S.A.
Melissa V. Collins
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185, U.S.A.
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Abstract

A wafer level packaging technique that involves anodic bonding of Pyrex wafers to released surface micromachined wafers is demonstrated. Besides providing a hermetic seal, this technique allows full wafer release, provides protection during die separation, and offers the possibility of integration with optoelectronic devices. Anodic bonding was performed under applied voltages up to 1000 V, and temperatures ranging from 280 to 400°C under vacuum (10-4Torr). The quality of the bonded interfaces was evaluated using shear strength testing and leak testing. The shear strength of Pyrex-to-polysilicon and aluminum bonds was ∼10-15 MPa. The functionality of surface micromachined polysilicon devices was tested before and after anodic bonding. 100% of thermal actuators, 94% of torsional ratcheting actuators, and 70% of microengines functioned after bonding. The 70% yield was calculated from a test sample of 25 devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 729: Symposium U – MEMS and BioMEMS , 2002 , U5.7
Copyright
Copyright © Materials Research Society 2002

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References

1. Dressendorfer, P.V., Peterson, D.A., and Reber, C.A., Proceedings of SPIE, 4217, 208–213 (2000).Google Scholar
2. Wallis, G. and Pomerantz, D.I., J. Appl. Phys., 40 [10], 3946–3949 (1969).Google Scholar
3. Bengtsson, S., J. Electronic Materials, 21 [8], 841–862 (1992).Google Scholar
4. Wolffenbuttel, R.F., Sensors and Actuators A, 62, 680–686 (1997).Google Scholar
5. Berthold, A., Nicola, L., Sarro, P.M., and Vellekoop, M. J., Sensors and Actuators A, 82, 224–228 (2000).Google Scholar
6. Oliver, A.D. and Matzke, C.M., 2000 Solid State Sensor and Actuator Conference, Hilton Head, S.C., June 2000, 5–6.Google Scholar
7. Long, Q., Park, J-S., and Gianchandani, Y.B., J. MEMS, 10 [2], 247–254 (2000).Google Scholar
8. Park, J-S, Chu, L.L., Oliver, A.D., and Gianchandani, Y.B., J. MEMS, 10 [2], 255–262 (2001).Google Scholar
9. Barnes, S.M., Miller, S.L., Rodgers, M.S., and Bitsie, F., Tech. Proc. of the 3rd International Conference on Modeling and Simulation of Microsystems, San Diego, CA, March 2000, 273–276.Google Scholar
10. Garcia, E.J. and Sniegowski, J.J., Sensors and Actuators A, 48 [3], 203–214 (1995).Google Scholar