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Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon

Published online by Cambridge University Press:  01 February 2011

R. Job ,
W. Düngen ,
Y. Ma ,
Y. L. Huang  and
J. T. Horstmann
R. Job
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
W. Düngen
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
Y. Ma
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
Y. L. Huang
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
J. T. Horstmann
Affiliation:
University of Dortmund, Faculty of Electrical Engineering and Information Technology, D-44227 Dortmund, Germany
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Abstract

By μ-Raman spectroscopy the formation of hydrogen related defects (vacancy-hydrogencomplexes, hydrogen saturated silicon dangling bonds, H2 molecules in multi-vacancies andvoids/platelets) has been investigated in H-implanted and subsequently H-plasma exposed andannealed Czochralski (Cz) silicon wafers. Annealing was done either in air or in an ambientcontaining hydrogen (forming gas). The investigations were applied under conditions, which arerelevant for ion-cut processes and layer exfoliation in Cz Si for SOI-wafer fabrication at reducedimplantation doses (as compared to standard procedures like the smart-cut® process).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E10.2
Copyright
Copyright © Materials Research Society 2005

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