Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-19T04:18:02.338Z Has data issue: false hasContentIssue false
  • English
  • Français

Visualisation of Ge Condensation in SOI

Published online by Cambridge University Press:  01 February 2011

Kristel Fobelets ,
Benjamin Vincent ,
Munir Ahmad ,
Astolfi Christofi  and
David McPhail
Kristel Fobelets
Affiliation:
[email protected], Imperial College London, Electrical Engineering Department, Exhibition Road, London, -, SW7 2BT, United Kingdom
Benjamin Vincent
Affiliation:
[email protected], Imperial College London, Electrical and Electronic Engineering, Exhibition Road, London, London, SW7 2BT, United Kingdom
Munir Ahmad
Affiliation:
[email protected], Imperial College London, Electrical and Electronic Engineering, Exhibition Road, London, London, SW7 2BT, United Kingdom
Astolfi Christofi
Affiliation:
[email protected], Imperial College London, Materials, Exhibition Road, London, London, SW7 2BT, United Kingdom
David McPhail
Affiliation:
[email protected], Imperial College London, Materials, Exhibition Road, London, London, SW7 2BT, United Kingdom
Get access

Abstract

We use a novel technique CABOOM – Characterisation of Alloy concentration via Beveling, Oxidation and Optical Microscopy – to visualize the change of the Ge concentration sandwiched between two SiO2 layers during the Ge condensation process. CABOOM is very sensitive to variations in the gradient of the Ge concentration in the SiGe layer and thus gives a fast and simple way to interpret the condensation process. We present a systematic study of Ge condensation in a 120nm thick Si0.92Ge0.08 layer on a 60 nm Si body SOI (silicon-on-insulator) as a function of oxidation temperature and time, using CABOOM, SIMS and XRD. CABOOM shows the non-linear variation of the Ge diffusion as a function of process time.

Keywords

Geoxidationoptical
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 913: Symposium D – Transistor Scaling – Methods, Materials and Modeling , 2006 , 0913-D01-09
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Mizuno, T., Takagi, S., Sugiyama, N., Satake, H., Kurobe, A., and Toriumi, A., “Electron Hole Mobility Enhancement in Strained-Si MOSFETs on SiGe-on-Insulator substrates Fabrication by SIMOX Technology,” IEEE-Elec. Dev. Lett., 21, 230 (2000)Google Scholar
2 Cheng, Z., Currie, M. T., Leitz, C. W., Taraschi, G., Fitzgerald, E. A., Hoyt, J. L., and Antoniadas, D. A., “Electron Mobility Enhancement in Strained-Si n-MOSFETs Fabricated on SiGe-on-Insulator (SGOI) Substrates,” IEEE-Elec. Dev. Lett., 22(7), (2001)Google Scholar
3 Tezuka, T., Sugiyama, N., Takagi, S.. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction. App. Phys. Lett. 79(12), (2001)Google Scholar
4 Hirashita, N., Numata, T., Tezuka, T., Sugiyama, N., Usuda, K., Irisawa, T., Tanabe, A., Moriyama, Y., Nakaharai, S., Takagi, S., Toyoda, E., Miyamura, Y., “Strained-Si/SiGe-on-Insulator wafers Fabricated by Ge-Condensation Process”, 2004 IEEE Internal. SOI conference, South Carolina, USA, (Oct 2004)Google Scholar
5 Prabhakaran, K., Nishioka, T., Sumitomo, K., Kobayashi, Y., Ogino, T.. Oxidation of ultrathin SiGe layer on Si (001) Evidence for inward movement of Ge”. Jpn. J. Appl. Phys 33, 1837 (1994)Google Scholar
6 Sugiyama, N., Tezuka, T., Mizuno, T., Suzuki, M.. “Temperature effects on Ge condensation by thermal oxidation of SiGe-on-insulator structures”. J. Appl. Phys. 95(8), (2004)Google Scholar
7 Kutsukake, K., Usami, N., Fujiwara, K., Ujihara, T., Sazaki, G., Zhang, B., Segawa, Y., Nakajima, K.. “Fabrication of SiGe-On-Insulator througth Thermal Diffusion of Ge on SiOn-Insulator Substrate”. J. Appl. Phys. 42, Part 2(3A), (2003)Google Scholar
8 Fobelets, K., Tan, T.L., Thielemans, K., Ahmad, M.M., Ferguson, R.S., and Zhang, J., “Colour coding Ge concentrations in Si1-xGex by bevelling and oxidation: CABOOM”, Semicon Sci Technol 19(3),510 (2004)Google Scholar