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Visible-Light Sensitivity in N-Doped ZnO Films Prepared by Reactive Magnetron Sputtering

Published online by Cambridge University Press:  01 February 2011

Yoshitaka Nakano ,
Takeshi Morikawa  and
Takeshi Ohwaki
Yoshitaka Nakano
Affiliation:
[email protected], TOYOTA Central Research and Development Laboratories, Inc., Inorganic Materials Laboratory, Nagakute, Aichi, 480-1192, Japan, +81-561-63-4302, +81-561-63-5328
Takeshi Morikawa
Affiliation:
[email protected], TOYOTA Central Research and Development Laboratories, Inc., Nagakute, Aichi, 480-1192, Japan
Takeshi Ohwaki
Affiliation:
[email protected], TOYOTA Central Research and Development Laboratories, Inc., Nagakute, Aichi, 480-1192, Japan
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Abstract

We report on visible-light sensitivity in N-doped ZnO (ZnO:N) films that were deposited on ITO/quartz substrates by reactive magnetron sputtering. Colored ZnO:N samples showed enhanced polycrystallization and a significant decrease in optical band gap from 3.1 to 2.3 eV with increasing N doping concentration, as determined by x-ray diffraction and optical absorption measurements. Deep-level optical spectroscopy measurements revealed three characteristic deep levels located at ∼0.98, ∼1.20, and ∼2.21 eV below the conduction band. In particular, the pronounced 2.21 eV band is newly introduced by the N doping and behaves as part of the valence band, resulting in the band-gap narrowing of ZnO. Therefore, this deep level is probably one origin of visible-light sensitivity in ZnO:N.

Keywords

optical propertieselectrical propertiessputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-57
Copyright
Copyright © Materials Research Society 2007

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References

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