Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-29T07:14:02.095Z Has data issue: false hasContentIssue false
  • English
  • Français

Visible Photoluminescence From Si Ion-Implanted and Thermally Annealed SiO2 Films

Published online by Cambridge University Press:  15 February 2011

Y. Kanemitsu ,
N. Shimizu ,
S. Okamoto ,
T. Komoda ,
P. L. F. Hemment  and
B. J. Sealy
Y. Kanemitsu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
N. Shimizu
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Okamoto
Affiliation:
Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
T. Komoda
Affiliation:
UK R&D Laboratory, Matsushita Electric Works Ltd., Guildford, Surrey, GU2 5YG, UK
P. L. F. Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
B. J. Sealy
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, UK
Get access

Abstract

We have experimentally studied the photoluminescence (PL) properties of Si clusters in SiO2 glassy matrices. Si clusters in the SiO2 matrices were fabricated by Si+ ion implantation into SiO2 glasses and then thermally annealed in forming gas. Broad PL peaks are observed in the visible spectral region at room temperature. Resonantly excited PL spectra indicate that the strong coupling of excitons and stretching vibrations of the Si-0 bonds causes the broad luminescent spectra. It is concluded that the interaction between electronic and vibrational excitations controls the luminescent emission and the observed dynamics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 99
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, for example, Kanemitsu, Y., Phys. Rep. 263, 1 (1995).Google Scholar
2.Tsybeskov, L. and Fauchet, M., Appl. Phys. Lett. 64, 1983 (1994).Google Scholar
3.Tsang, J.C., Tischler, M.A. and Collins, R.T., Appl. Phys. Lett. 60, 2279 (1992).Google Scholar
4.Kanemitsu, Y., Phys. Rev. B 53, 13515 (1996);Google Scholar
Kanemitsu, Y. and Okamoto, S., to be published.Google Scholar
5.Kanemitsu, Y., Ogawa, T., Shiraishi, K., and Takeda, K., Phys. Rev. B 48, 4883 (1993).Google Scholar
6.Brus, L.E., Szajowski, P.F., Wilson, W.L., Harris, T.D., Shuppler, S., and Citrin, P.H., J. Am. Chem. Soc. 117, 2915 (1995).Google Scholar
7.Shimazu-Iwayama, T., Nakao, S., and Saitoh, K., Appl. Phys. Lett. 65, 1814 (1994).Google Scholar
8.Komoda, T., Kelly, J., Cristiano, F., Nejim, A., Hemment, P.L.F., Homewood, K.P., Gwilliam, R., Mynard, J.E., and Sealy, B.J., Nucl. Inst. Meth. Phys. Res. B 96, 387 (1995).Google Scholar
9.Fischer, T., Petrova-Koch, V., Shcheglov, K., Brandt, M.S., and Koch, F., Thin Solid Films 276, 100 (1996).Google Scholar
10.Atwater, H.A., Scchglov, K.V., Wong, S.S., Vahala, K.J., Flagan, R.C., Brongersma, M.L., and Polma, A., Mater. Res. Soc. Symp. Proc. 316, 409 (1994).Google Scholar
11.Kondo, M. and Kanemitsu, Y., unpublished data.Google Scholar
12.Kanemitsu, Y., Shimizu, N., Komoda, T., Hemment, P.L.F., and Sealy, B.J., Phys. Rev. B 54, R14329 (1996).Google Scholar
13.Martin, E., Delenie, C., Allan, G., and Lannoo, M., Phys. Rev. B 50, 18258 (1994).Google Scholar
14.Takagahara, T. and Takeda, K., Phys. Rev. B 53, R4205 (1996).Google Scholar
15.Kanemitsu, Y., Okamoto, S., Otobe, M., and Oda, S., to be published.Google Scholar
16.Calcott, P.D.J., Nash, K.J., Canham, L.T., Kane, M.J., and Brumhead, D., J. Phys. Condens. Matter. 5, L91 (1993); J. Lumin. 57, 257 (1993).Google Scholar
17.Kanemitsu, Y. and Okamoto, S., to be published.Google Scholar
18. See, for example, Ueta, M., Kanzaki, H., Kobayashi, K., Toyozawa, Y., and Hanamura, E., Excitonic Processes in Solids (Springer-Velarg, Berlin 1986).Google Scholar
19.Okamoto, S. and Kanemitsu, Y., Phys. Rev. B 54, 16421 (1996).Google Scholar
20. See, for example, Inoue, K., Yamanaka, A., Toba, K., Baranov, A.V., Onuschchenko, A.A., and Fedorov, A.V., Phys. Rev. B. 54, R8321 (1996);Google Scholar
Scamarcio, G., Spagnolo, V., Ventrani, G., Lugara, M., and Righini, G.C., Phys. Rev. B 53, R10489 (1996).Google Scholar