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Visible Photoluminescence From Porous Silicon Carbide

Published online by Cambridge University Press:  25 February 2011

T. Matsumoto ,
T. Tamaki ,
T. Futagi ,
H. Mimura  and
Y. Kanemitsu
T. Matsumoto
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5 – 10 – 1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
T. Tamaki
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5 – 10 – 1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
T. Futagi
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5 – 10 – 1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
H. Mimura
Affiliation:
Electronics Research Laboratories, Nippon Steel Corporation, 5 – 10 – 1 Fuchinobe, Sagamihara, Kanagawa 229, Japan
Y. Kanemitsu
Affiliation:
I Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Abstract

We have fabricated porous silicon carbide using single crystal 6H–SiC that has a wider indirect bandgap than silicon crystal prepared by electrochemical anodization. We have observed intense blue–green luminescence with the peak wavelength of around 500 nm at room temperature. The luminescence intensity is about five hundred times stronger than that of free electron to acceptor recombination in 6H–SiC crystal. This porous SiC offers an intense blue–green luminescent material. The results of structural analysis (secondary electron microscope analysis) and optical measurements (photoluminescence spectrum, Raman spectrum, and picosecond luminescence decay) suggest that the origin of the intense blue–green luminescence is the same as that of the intense red luminescence of porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 298: Symposium B – Silicon-Based Optoelectronic Materials , 1993 , 355
Copyright
Copyright © Materials Research Society 1993

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