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Visible Photoluminescence and Microstructure of Annealed and Chemically Etched Amorphous Si

Published online by Cambridge University Press:  28 February 2011

K. H. Jung ,
S. Shih ,
D. L. Kwong ,
C. C. Cho  and
B. E. Gnade
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
S. Shih
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712.
C. C. Cho
Affiliation:
Texas Instruments Inc., P.O. Box 655936, Dallas, TX 75265.
B. E. Gnade
Affiliation:
Texas Instruments Inc., P.O. Box 655936, Dallas, TX 75265.
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Abstract

We have studied the visible photoluminescence (PL) and microstructure of porous Si layers (PSLs) fabricated by the chemical etching of annealed amorphous Si (a-Si). The a-Si layers were partially crystallized by annealing between 550°C-1150°C in N2 and the PSL formed by etching in a HF-HNO3-based solution. No visible PL was observed after etching of unannealed a-Si. Visible PL was detected after etching a-Si layers first annealed at temperatures ≥725°C, coinciding with the observation of Si microcrystallites in the annealed layer prior to etching. The results suggest that an initial crystalline structure is important for fabricating luminescent PSLs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 33
Copyright
Copyright © Materials Research Society 1993

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References

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