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Visible Luminescence from Laser-Induced Stain- and Dry Etched Silicon
Published online by Cambridge University Press: 15 February 2011
Abstract
Light emitting silicon has been prepared by Ar laser (514.5 nm) induced stain etching and Nd:YAG impulse (532 nm) laser irradiation in air. Photoluminescence (PL), IR and XPS spectra have been studied. The intensity and position of the PL depend on the power or the energy and the duration of laser beam treatment during the etching. Correlation between the PL and chemical bonding is discussed.
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- Copyright © Materials Research Society 1996
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