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Visible Light Emitting Diode Employing Electrochemically Anodized Nanocrystalline Silicon Thin Film

Published online by Cambridge University Press:  15 February 2011

T. Toyama ,
T. Yamamoto ,
T. Matsui  and
H. Okamoto
T. Toyama
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
T. Yamamoto
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
T. Matsui
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
H. Okamoto
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Visible electroluminescence (EL) has been achieved on the entirely solid state thin film light emitting diode (TFLED) employing electrochemically anodized nanocrystalline Si (nc-Si) as a light emitting active layer. The TFLED consisting of p-type nc-Si, and intrinsic and n-type amorphous layers was fabricated on a SnO2-coated glass substrate. The nc-Si was formed in HF aqueous solution from boron doped microcrystalline Si (μc-Si) deposited by rf plasma chemical vapor deposition (CVD). The TFLED exhibits clear rectification with a forward threshold voltage of about 1.5 V, whereas visible EL emission is observed upon applying reverse bias voltages. The diode ideality factor is more than 2, and the light output increases with the square of the diode current. The EL emission color is orange-red and the spectral peak energy is 1.8 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 675
Copyright
Copyright © Materials Research Society 1997

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